# Oxygen-pressure driven balancing of interface and bulk scattering in amorphous oxide semiconductor thin-film transistors

https://mdr.nims.go.jp/datasets/a0f8010f-295c-4e9a-a101-334dcd66ca99

## File

- [InSiO 2025.pdf](https://mdr.nims.go.jp/filesets/f6a9ec76-7785-488f-986d-ab6f8fb3f092/download) ([Detail](https://mdr.nims.go.jp/filesets/f6a9ec76-7785-488f-986d-ab6f8fb3f092.md))

## Id

a0f8010f-295c-4e9a-a101-334dcd66ca99

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-09-23T23:16:05.259913Z

## Updated at

2025-09-26T08:46:31.238541Z

## Published at

2025-09-24T03:18:53.258699Z

## Doi

https://doi.org/10.48505/nims.5775

## First published url

https://doi.org/10.1016/j.mtelec.2025.100171

## Date published

2025-09-05

## Recorded date published

2025-12

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Oxygen-pressure driven balancing of interface and bulk scattering in amorphous
    oxide semiconductor thin-film transistors
  title_type: original
  lang: en

## Description

- description: 'Oxygen vacancies (VO) critically influence the electronic properties
    and stability of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs).
    Here, we investigate the impact of oxygen partial pressure during film deposition
    on charge transport mechanisms in 10-nm-thick silicon-doped indium oxide (ISO)
    TFTs. By adjusting the Ar:O2 ratio (11:1, 8:4, and 6:6), we observe a shift from
    interface-limited to bulk-scattering-dominated transport. Higher O2 pressure leads
    to increased subthreshold swing (SS), positive threshold voltage (Vth) shifts,
    and larger current fluctuations, suggesting greater charge trapping and mobility
    degradation. Lowfrequency noise (LFN) analysis further reveals a shift in the
    dominant noise mechanism: interface charge trapping dominates at low O2 pressure,
    while bulk carrier scattering prevails at high O2 pressure. The extracted trap
    density (Nit) increases by nearly two orders of magnitude, confirming the role
    of fully oxidized indium atoms in the conducting channel as charge-scattering
    centers. These findings establish oxygen pressure as a key parameter for balancing
    interface and bulk effects in AOS TFTs and provide a pathway for optimizing device
    performance and stability in next-generation oxide electronics.'
  description_type: abstract
  lang: und

## Creator

- name: Che-Yi Lin
  role: author
- name: Yu-Ching Kuo
  role: author
  orcid: https://orcid.org/0009-0008-1978-4016
- name: I-Chen Liu
  role: author
- name: Feng-Shou Yang
  role: author
- name: Yuan-Ming Chang
  role: author
- name: Po-Wen Chiu
  role: author
- name: Toshihide Nabatame
  role: author
- name: Mengjiao Li
  role: author
- name: Kazuhito Tsukagoshi
  role: author
  orcid: https://orcid.org/0000-0001-9710-2692
- name: Yen-Fu Lin
  role: author
  orcid: https://orcid.org/0000-0002-1545-9143

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: Oxide
  schema: not_defined
- subject: thin film
  schema: not_defined
- subject: transistor
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Materials Today Electronics
  issn: '27729494'
  volume: '14'
  article_number: '100171'

## Conference



## Related item



## Funding

- identifier: '62304320'
  funder_name: National Natural Science Foundation of China
- funder_name: Kogakuin University
- identifier: 113\u20132811-M-005\u2013024
  funder_name: National Science and Technology Council
- identifier: 113\u20132811-M-005\u2013020
  funder_name: National Science and Technology Council
- identifier: 113\u20132119-M-007\u2013015-MBK
  funder_name: National Science and Technology Council
- identifier: NSTC 112\u20132628-M-005\u2013001-MY3
  funder_name: National Science and Technology Council

## Instrument



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## Measurement method



## Specimen



## Chemical composition



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## Fileset

- id: f6a9ec76-7785-488f-986d-ab6f8fb3f092
  filename: InSiO 2025.pdf
  content_type: application/pdf
  size: 1598550
  md5: 864132d2f639f5df19ec0ce3ac69647b

## Thumbnail

fileset_id: f6a9ec76-7785-488f-986d-ab6f8fb3f092
filename: InSiO 2025.pdf