説明:
(abstract)Contaminations in the formation of two-dimensional heterostructures can hinder or generate desired properties. Recent advancements have highlighted the potential of tipenhanced Raman spectroscopy (TERS) for studying materials in the 2D semiconductor class. In this work, we investigate the influence of 50-200nm sized nanoprotuberances within a monolayer of MoSe2 deposited on hBN using nano-Raman spectroscopy, establishing correlations between the presence of localized contaminations and the observed hyperspectral variations. A figure of merit is established for the identification of surface contaminations, based on MoSe2 peaks ratio. Notably, new spectral peaks were identified, which are associated with the presence of nanoprotuberances and may indicate contamination, oxidation, or trapped gases within them.
権利情報:
キーワード: Nano-Raman Spectroscopy MoSe2
刊行年月日: 2025-10-14
出版者: American Chemical Society (ACS)
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1021/acsnano.5c08036
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その他の識別子:
連絡先:
更新時刻: 2025-12-09 16:30:45 +0900
MDRでの公開時刻: 2025-12-09 16:26:06 +0900
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2025-ACS-Nano-Elisa-nano-raman-spectroscopy-figure-of-merit-and-chemical-analysis-of-contaminations-in-single-layer-mose2.pdf
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サイズ | 5.39MB | 詳細 |