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説明:

To obtain thermally stable high-dielectric-constant thin-film materials, A2B2O7 thin films (Sr2Ta2O7, Sr2Nb2O7, La2Zr2O7, and La2Ti2O7) containing Sr or La and their solid solutions were grown on Pt/Ti/SiO2/Si substrates by RF sputtering and their crystal structures and dielectric properties were investigated. The Sr2Ta2O7 and La2Ti2O7 films exhibit highly oriented crystal structures. By contrast, the Sr2Nb2O7 and La2Zr2O7 films exhibit polycrystalline structures. The leakage properties of the Sr-containing films are lower and more stable in the high-temperature region (to 300 oC) than those of the La-containing films. Among the investigated films, the Sr2Ta2O7 film grown at 500 oC and annealed at 900 oC shows the most stable dielectric constant with respect to temperature in the temperature range from room temperature to 300 oC. In addition, the xSr2Ta2O7–(1−x)La2Ti2O7 solid solutions exhibit enhanced dielectric properties at x = 0.35. The dielectric constant is greater than 100, and its variation with temperature is less than 10%. The Sr-containing A2B2O7 ferroelectric thin films have potential applications as high-temperature film capacitors that can operate at temperatures as high as 300 oC.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: dielectrics, layered perovskite, pyrochlore, film capacitor, combinatorial method

刊行年月日: 2024-06-18

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Omega (ISSN: 24701343) vol. 9 issue. 24 p. 25968-25975

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acsomega.4c00788

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更新時刻: 2024-10-10 16:30:46 +0900

MDRでの公開時刻: 2024-10-10 16:30:46 +0900