# Investigation of group 13 elements as potential candidates for p-type dopants in the narrow-gap thermoelectric semiconductor α-SrSi2

https://mdr.nims.go.jp/datasets/a061c092-a577-4dc4-8264-38e3a3357c0c

## File

- [SrSi2_Ga_Kunioka_J_Mater_Sci_59.pdf](https://mdr.nims.go.jp/filesets/846193d6-8c1a-4ab8-868f-44a9e2f5ed25/download) ([Detail](https://mdr.nims.go.jp/filesets/846193d6-8c1a-4ab8-868f-44a9e2f5ed25.md))

## Id

a061c092-a577-4dc4-8264-38e3a3357c0c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-07-16T04:10:28.993863Z

## Updated at

2024-07-17T00:05:42.504207Z

## Published at

2024-07-16T07:30:23.351793Z

## Doi



## First published url

https://doi.org/10.1007/s10853-024-09653-x

## Date published

2024-04-25

## Recorded date published

2024-5

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Investigation of group 13 elements as potential candidates for p-type dopants
    in the narrow-gap thermoelectric semiconductor α-SrSi2
  title_type: original
  lang: en

## Description

- description: To investigate the possibility of p-type doping of α-SrSi2, a promising
    as an eco-friendly thermoelectric material, the energy changes of substitutions
    of the Si site of α-SrSi2 by group 13 elements were evaluated using first-principles
    calculations. It is found that Ga-doping was the most energetically favorable
    dopant while In is the most unfavorable. We examined the synthesis of Ga and In
    doped α-SrSi2 using the vertical Bridgeman method and investigated their thermoelectric
    properties. The Ga atoms were doped to α-SrSi2 successfully up to 1.0 at. %, while
    In atoms couldn’t be doped as suggested by calculations. For experimental prepared
    Ga-doped samples, the carrier density was observed to increase with Ga doping,
    from 3.58 x 1019 cm-3 for undoped α-SrSi2 to 4.49 x 1020 cm-3 for a 1.0 at. %
    Ga doped sample at 300K. The temperature dependence of carrier concentrations
    was observed to change from negative to positive with increasing Ga content. In
    addition, the temperature dependence of the Seebeck coefficient was also observed
    to change from negative to positive with increasing Ga content. The results indicate
    that α-SrSi2 undergoes a semiconductor-metal transition with Ga doping. The power
    factor for the undoped sample was quite high, at 2.5 mW/mK2, whilst the sample
    with 0.3 at. % Ga had a value of 1.1 mW/mK2 at room temperature.
  description_type: abstract
  lang: und

## Creator

- name: Haruno Kunioka
  role: author
- name: Daishi Shiojiri
  role: author
- name: Shinta Takahashi
  role: author
- name: Kota Hiratsuka
  role: author
- name: Masato Yamaguchi
  role: author
- name: Naomi Hirayama
  role: author
- name: Yoji Imai
  role: author
- name: Motoharu Imai
  role: author
  orcid: https://orcid.org/0000-0002-5848-113X
  organization: National Institute for Materials Science
- name: Tsutomu Iida
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: silicide
  schema: not_defined
- subject: thermoelectric material
  schema: not_defined
- subject: doping
  schema: not_defined
- subject: first-principles calculation
  schema: not_defined
- subject: melt growth
  schema: not_defined
- subject: sintering
  schema: not_defined
- subject: SrSi2
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Journal of Materials Science
  issn: '15734803'
  volume: '59'
  start_page: 7840
  end_page: 7853

## Conference



## Related item



## Funding

- identifier: JP22H00268
  funder_name: KAKENHI
  description: 日本学術振興会
- identifier: JP23K13317
  funder_name: KAKENHI
  description: 日本学術振興会
- identifier: JP23K00189
  funder_name: KAKENHI
  description: 日本学術振興会
- funder_name: Thermal & Electric Energy Technology Inc. Foundation

## Instrument



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## Specimen



## Chemical composition



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## Fileset

- id: 846193d6-8c1a-4ab8-868f-44a9e2f5ed25
  filename: SrSi2_Ga_Kunioka_J_Mater_Sci_59.pdf
  content_type: application/pdf
  size: 2786551
  md5: f90eaf0c0200bb076437fe4a90890486

## Thumbnail

fileset_id: 846193d6-8c1a-4ab8-868f-44a9e2f5ed25
filename: SrSi2_Ga_Kunioka_J_Mater_Sci_59.pdf