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The band non-parabolicity of tin-doped indium oxide (ITO) polycrystalline thin films is investigated with the quasi-linear Kane model through Seebeck and Hall effect measurements. We report Kane model non-parabolic band parameters of m∗0 = 0.21 m0 and C = 0.52 eV-1 for ITO, in good agreement with historical photoemission, optical, and transport measurements. To do this, the ITO films were doped with nitrogen by ion implantation, with fluences ranging from 5 × 1014 N cm-2 to 5 × 1015 N cm-2. The presence of the nitrogen in the films was verified with X-ray photoelectron spectroscopy, and their acceptor character studied theoretically by density functional theory. Experimentally, the doped nitrogen formed NO- defects, deep acceptor states that led to a controlled compensation in carrier concentration from 10.1×1020±0.6×1020 cm-3 to 2.9×1020±0.2×1020 cm-3. Understanding the band non-parabolicity of degenerately doped transparent conducting oxides is essential for their commercial application in solar cells, transparent thermoelectric generators, and transparent thin film transistors, and by this work, the Seebeck and Hall effect approach with the quasi-linear Kane model for band non-parabolicity is presented as a practical method by which to study the variation in carrier effective mass without reliance on optical measurements.

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• In Copyright
  ©2024 American Physical Society

Keyword: 熱電材料

Date published: 2024-03-05

Publisher: American Physical Society (APS)

Journal:

• Physical Review B (ISSN: 1550235X) vol. 19 issue. 11 115201

Funding:

• Ministry of Business, Innovation and Employment C05X1802
• Ministry of Business, Innovation and Employment C05X1702
• Japan Science and Technology Agency JPMJMI19A1

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4609

First published URL: https://doi.org/10.1103/physrevb.109.115201

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Updated at: 2024-07-31 12:30:14 +0900

Published on MDR: 2024-07-31 12:30:15 +0900