# Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

https://mdr.nims.go.jp/datasets/a026c3b5-4b50-4a23-9163-a2ff7badf0ce

## File

- [1.4745048.pdf](https://mdr.nims.go.jp/filesets/bab40c8f-be29-40d7-b898-f039a06e7c13/download) ([Detail](https://mdr.nims.go.jp/filesets/bab40c8f-be29-40d7-b898-f039a06e7c13.md))

## Id

a026c3b5-4b50-4a23-9163-a2ff7badf0ce

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2021-08-05T16:24:09.401780Z

## Updated at

2024-01-05T13:12:58.198079Z

## Published at

2021-08-13T18:56:14.445875Z

## Doi



## First published url

https://doi.org/10.1063/1.4745048

## Date published

2012-08-01

## Recorded date published

2012-8-1

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Conduction band caused by oxygen vacancies in aluminum oxide for resistance
    random access memory
  title_type: original
  lang: en

## Description

- description: "As a next-generation memory, we have developed a rare-metal-free memory
    using Al oxide with\r\na high-density of oxygen vacancies (Vos). The electronic
    structure has been simulated using\r\nfirst-principles calculations. In this paper,
    we report the electronic structure of the band gap,\r\nanalyzed using thermally
    stimulated current measurements, to evaluate the simulated results. We\r\nobserved
    electronic states corresponding to resistance changes for the first time. These
    results show that Vo þ2 (electron empty Vo) changes to Vo\r\nþ1 by electron injection;
    the overlapped Vo þ1 electron changes into a “Vo conduction band” (VoCB), and
    the changed structure is stabilized by structural relaxation of Al ions around
    Vo. VoCB is considered as a kind of mid-gap impurity band. The\r\norigin of the
    on/off switching is considered to be generation/degeneration of the VoCB caused
    by\r\nincreasing/decreasing numbers of Vo electrons. Based on knowledge of the
    electronic mechanism,\r\nwe have changed metal/insulator/metal structure to a
    metal/insulator/semiconductor structure and\r\ndecreased the reset-current to
    7 lA. The Vos of Al oxide are considered to be useful for electronic\r\nmemory
    storage."
  description_type: abstract
  lang: en

## Creator

- name: Kubota, Masato
  role: author
- name: Nigo, Seisuke
  role: author
- name: Kitazawa, Hideaki
  role: author
  orcid: https://orcid.org/0000-0002-9756-2311
- name: Harada, Yoshitomo
  role: author
  orcid: https://orcid.org/0000-0001-9380-2106
- name: Kido, Giyuu
  role: author
- name: Hirayama, Taisei
  role: author
- name: Kato, Seiichi
  role: author
  orcid: https://orcid.org/0000-0002-6427-5463

## Contact agent



## Publisher

organization: American Institute of Physics

## Managing organization



## Keyword

- subject: Crystallographic defects
  schema: not_defined
- subject: Random access memory
  schema: not_defined
- subject: Electrical properties and parameters
  schema: not_defined
- subject: First-principle calculations
  schema: not_defined
- subject: electron energy loss spectroscopy
  schema: not_defined
- subject: Electronic bandstructure
  schema: not_defined
- subject: semiconductor structures
  schema: not_defined
- subject: Resistive switching
  schema: not_defined
- subject: Thermally stimulated current spectroscopy
  schema: not_defined
- subject: Transmission electron microscope
  schema: not_defined

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## Fileset

- id: bab40c8f-be29-40d7-b898-f039a06e7c13
  filename: 1.4745048.pdf
  content_type: application/pdf
  size: 2614682
  md5: a67ac45f0d198bb3f191c4b7c1257e6c

## Thumbnail

fileset_id: bab40c8f-be29-40d7-b898-f039a06e7c13
filename: 1.4745048.pdf