# Compositional changes between metastable SnO and stable SnO2 in a sputtered film for p-type thin-film transistors

https://mdr.nims.go.jp/datasets/9f552f01-0852-4f4a-bf74-f6e672c04fe3

## Files

- [1-s2.0-S0040609024003493-main.pdf](https://mdr.nims.go.jp/filesets/778c7c8d-102a-43e5-a3a4-5da177c298cc/download) ([Detail](https://mdr.nims.go.jp/filesets/778c7c8d-102a-43e5-a3a4-5da177c298cc.md))

## Id

9f552f01-0852-4f4a-bf74-f6e672c04fe3

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-10-14T22:28:12.134145Z

## Updated at

2024-10-15T07:30:30.418729Z

## Published at

2024-10-15T07:30:30.574741Z

## Doi



## First published url

https://doi.org/10.1016/j.tsf.2024.140548

## Date published

2024-10-09

## Recorded date published

2024-10

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Compositional changes between metastable SnO and stable SnO2 in a sputtered
    film for p-type thin-film transistors
  title_type: original
  lang: en

## Description

- description: p-Type tin(II) oxide (SnO (Sn2+)) formation using radiofrequency (RF)
    reactive magnetron sputtering and post-deposition annealing (PDA) processes was
    investigated. The as-grown SnOx film deposited from an SnOx (SnO:Sn = 60:40) target
    by RF sputtering at an oxygen partial pressure (PO2) of 0 Pa consisted of 2% Sn
    (Sn0), 42% Sn2+, and 56% SnO2 (Sn4+). However, compared with the Sn2+ fraction
    observed after PDA under N2 and low-vacuum (~1 Pa) conditions, that after PDA
    at 300 C under high vacuum (< 5 × 10−4 Pa) (HVPDA) increased substantially to
    greater than 62%. This result was attributed to the transformation from SnO2 to
    SnO during HVPDA. A staggered bottom-gate TFT with an SnO channel (10 nm), which
    was fabricated by HVPDA at 300 °C, exhibited p-type properties, including a relatively
    high on-current/off-current (Ion/Ioff) ratio of 5.1 × 104 and a hole field-effect
    mobility (μFE) of 1.8 cm2/(V·s).
  description_type: abstract
  lang: und

## Creator

- name: Yong-Lie Sun
  role: author
  orcid: https://orcid.org/0000-0003-1113-1658
- name: Toshihide Nabatame
  role: author
- name: Jong Won Chung
  role: author
  orcid: https://orcid.org/0000-0002-9799-7438
- name: Tomomi Sawada
  role: author
- name: Hiromi Miura
  role: author
- name: Manami Miyamoto
  role: author
- name: Kazuhito Tsukagoshi
  role: author
  orcid: https://orcid.org/0000-0001-9710-2692
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: p-type SnO
  schema: not_defined
- subject: Thin-film transistors
  schema: not_defined
- subject: Sputtering
  schema: not_defined
- subject: High vacuum Annealing
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Thin Solid Films
  issn: '00406090'
  volume: '807'
  issue: '30'
  article_number: '140548'

## Conference



## Related item



## Funding

- funder_name: Samsung Advanced Institute of Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 778c7c8d-102a-43e5-a3a4-5da177c298cc
  filename: 1-s2.0-S0040609024003493-main.pdf
  content_type: application/pdf
  size: 4110321
  md5: eca60b0d1951906c4777567e14d59f6c

## Thumbnail

fileset_id: 778c7c8d-102a-43e5-a3a4-5da177c298cc
filename: 1-s2.0-S0040609024003493-main.pdf