# Electrical activity of Mg clustering at nanoscale defects induced by N ion implantation in GaN

https://mdr.nims.go.jp/datasets/9ee196cc-a998-42d7-80c8-0112ba57cbbd

## File

- [Electrical activity of Mg clustering at nanoscale defects induced by N ion implantation in GaN.pdf](https://mdr.nims.go.jp/filesets/596b0770-87ad-48d4-be0d-495b47ace382/download) ([Detail](https://mdr.nims.go.jp/filesets/596b0770-87ad-48d4-be0d-495b47ace382.md))

## Id

9ee196cc-a998-42d7-80c8-0112ba57cbbd

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-06-24T13:05:51.552153Z

## Updated at

2026-06-25T00:46:49.400415Z

## Published at

2026-06-25T03:26:56.743681Z

## Doi

https://doi.org/10.48505/nims.6368

## First published url

https://doi.org/10.1063/5.0335166

## Date published

2026-06-22

## Recorded date published

2026-6-22

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Electrical activity of Mg clustering at nanoscale defects induced by N ion
    implantation in GaN
  title_type: original
  lang: en

## Description

- description: The p-type doping of GaN using Mg ion implantation remains a critical
    challenge in the development of GaN power devices. Herein, we demonstrate that
    Mg clustering, induced by sequential N ion implantation, impacts acceptor concentration
    (Na), compensating donor concentration (Nd), and acceptor activation energy (ΔEa).
    N was implanted at the same concentration as Mg to suppress Mg diffusion. Hall-effect
    measurements indicated that, for Mg doses above 1×1019 cm−3, Na reached a plateau
    whereas Nd continued to increase. Consequently, the net acceptor concentration
    (Na − Nd) reached a maximum of 4×1018 cm−3 at a Mg dose of 1×1019 cm−3. ΔEa decreased
    with increasing Mg dose. Atomic-resolution structural analyses revealed that nanoscale
    defects generated by N implantation induced Mg clustering around these defects,
    with the cluster density increasing with Mg dose. Notably, peak Mg concentrations
    within these clusters exceeded 1×1021 cm−3 and increased with Mg dose, whereas
    Mg atoms outside these clusters remained uniformly dispersed in the range 1.3−1.5×1018
    cm−3 regardless of Mg dose. These findings suggest that the increase in Na up
    to a Mg dose of 1×1019 cm−3 can be attributed to the Mg atoms within these Mg-rich
    clusters acting as acceptors, which also lowered ΔEa. Conversely, Mg atoms at
    or near the peak Mg-concentration sites likely acted as compensating donors, contributing
    to the increase in Nd with increasing Mg dose. These findings elucidate the impact
    of Mg clustering induced by nanoscale implantation defects on the p-type conductivity
    of GaN, providing insight for improving ion-implantation doping strategies in
    GaN.
  description_type: abstract
  lang: und

## Creator

- name: Kosuke Ishikawa
  role: author
- name: Emi Kano
  role: author
  orcid: https://orcid.org/0000-0001-6134-4980
- name: Jun Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
- name: Kensuke Sumida
  role: author
- name: Tetsuo Narita
  role: author
  orcid: https://orcid.org/0000-0002-0849-360X
- name: Masahiro Horita
  role: author
  orcid: https://orcid.org/0000-0003-0008-6732
- name: Junya Sahashi
  role: author
- name: Shun Lu
  role: author
  orcid: https://orcid.org/0000-0002-7342-757X
- name: Jun Suda
  role: author
  orcid: https://orcid.org/0000-0002-5453-4943
- name: Tadakatsu Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951
- name: Tetsu Kachi
  role: author
  orcid: https://orcid.org/0000-0002-4300-5720
- name: Nobuyuki Ikarashi
  role: author
  orcid: https://orcid.org/0000-0002-5575-5780

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: gallium nitride
  schema: not_defined
- subject: atom probe tomography
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in Kosuke Ishikawa, Emi Kano, Jun Uzuhashi, Kensuke Sumida, Tetsuo Narita, Masahiro
    Horita, Junya Sahashi, Shun Lu, Jun Suda, Tadakatsu Ohkubo, Tetsu Kachi, Nobuyuki
    Ikarashi; Electrical activity of Mg clustering at nanoscale defects induced by
    N ion implantation in GaN. Appl. Phys. Lett. 22 June 2026; 128 (25): 252102 and
    may be found at https://doi.org/10.1063/5.0335166.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '128'
  issue: '25'
  article_number: '252102'

## Conference



## Related item



## Funding

- identifier: JPJ009777
  funder_name: Ministry of Education, Culture, Sports, Science and Technology

## Instrument



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## Instrument managing organization



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## Fileset

- id: 596b0770-87ad-48d4-be0d-495b47ace382
  filename: Electrical activity of Mg clustering at nanoscale defects induced by N
    ion implantation in GaN.pdf
  content_type: application/pdf
  size: 684535
  md5: ff2030c306423134b9a88f828dbd4191

## Thumbnail

fileset_id: 596b0770-87ad-48d4-be0d-495b47ace382
filename: Electrical activity of Mg clustering at nanoscale defects induced by N ion
  implantation in GaN.pdf