# High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

https://mdr.nims.go.jp/datasets/9dcfba80-11a4-4e0e-8d45-ddc37c8d7152

## File

- [Advanced Science - 2024 - Liao - High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect.pdf](https://mdr.nims.go.jp/filesets/f0b7a296-d74e-47e1-acd4-c33e009ca0e3/download) ([Detail](https://mdr.nims.go.jp/filesets/f0b7a296-d74e-47e1-acd4-c33e009ca0e3.md))

## Id

9dcfba80-11a4-4e0e-8d45-ddc37c8d7152

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-04-09T01:54:13.285912Z

## Updated at

2024-04-09T07:30:23.364793Z

## Published at

2024-04-09T07:30:23.467200Z

## Doi



## First published url

https://doi.org/10.1002/advs.202306013

## Date published

2024-01-19

## Recorded date published

2024-4

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect
    Transistors Based on N‐Type Diamond
  title_type: original
  lang: en

## Description

- description: Here, electronic-grade phosphorus-doped n-type diamond epilayer with
    anatomically flat surface based on step-flow nucleation mode is fabricated. Consequently,
    n-channel diamond MOSFETs are demonstrated. The n-type diamond MOSFETs exhibit
    a high field-effect mobility around150 cm2 /V-sec at 573 K, which is the highest
    among all the n-channel MOSFETs based on wide-bandgap semiconductors. This work
    enables the development of energy-efficient and high-reliability CMOS integrated
    circuits for high-power electronics, integrated spintronics, and extreme sensors
    under harsh environments.
  description_type: abstract
  lang: und

## Creator

- name: Meiyong Liao
  role: author
  orcid: https://orcid.org/0000-0003-1361-4266
- name: Huanying Sun
  role: author
- name: Satoshi Koizumi
  role: author
  orcid: https://orcid.org/0000-0003-4961-5658

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: Diamond, n-type, MOSFET
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Advanced Science
  issn: '21983844'
  volume: '11'
  issue: '13'

## Conference



## Related item



## Funding

- identifier: 20H02212
  funder_name: Japan Society for the Promotion of Science
- identifier: 22K18957
  funder_name: Japan Society for the Promotion of Science
- identifier: 15H03999
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: f0b7a296-d74e-47e1-acd4-c33e009ca0e3
  filename: Advanced Science - 2024 - Liao - High‐Temperature and High‐Electron Mobility
    Metal‐Oxide‐Semiconductor Field‐Effect.pdf
  content_type: application/pdf
  size: 2031579
  md5: 01e70cbf6eaeb55455f79c2413d0ef77

## Thumbnail

fileset_id: f0b7a296-d74e-47e1-acd4-c33e009ca0e3
filename: Advanced Science - 2024 - Liao - High‐Temperature and High‐Electron Mobility
  Metal‐Oxide‐Semiconductor Field‐Effect.pdf