Download file (1.02MB)
Download as zip (1020KB)

コレクション

引用

説明:

Self-assembled quantum dots (QDs) are potential candidates for photoelectric and photovoltaic devices, because of their discrete energy levels. The characterization of QDs at the atomic level using a multimodal approach is crucial to improving device performance because QDs are nanostructures with highly correlated structural parameters. In this study, scanning transmission electron microscopy, geometric phase analysis, and atom probe tomography were employed to characterize structural parameters such as the shape, strain, and composition of self-assembled InAs-QDs with InGaAlAs spacer layers. The measurements revealed characteristic AlAs-rich regions above the QDs and InAs-rich regions surrounding the QD columns, which can be explained by the relationship between the effect of strain and surface curvature around the QD. The methodology described in this study accelerates the development of future QD devices because its multiple perspectives reveal phenomena such as atomic-scale segregations and allow for more detailed discussions of the mechanisms of these phenomena.

権利情報:

• In Copyright
  This document is the Accepted Manuscript version of a Published Work that appeared in final form in The Journal of Physical Chemistry Letters, copyright © 2024 The Authors. Published by American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.jpclett.3c03507

キーワード: quantum dot, atom probe tomography, transmission electron microscopy

刊行年月日: 2024-04-11

出版者: American Chemical Society (ACS)

掲載誌:

• The Journal of Physical Chemistry Letters (ISSN: 19487185) p. 3772-3778

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4594

公開URL: https://doi.org/10.1021/acs.jpclett.3c03507

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-04-14 16:30:23 +0900

MDRでの公開時刻: 2025-04-14 14:56:24 +0900