# Room Temperature Negative Differential Resistance with High Peak Current in MoS<sub>2</sub>/WSe<sub>2</sub> Heterostructures

https://mdr.nims.go.jp/datasets/9be8942a-2ab6-41e3-be1b-5fd816a84cf2

## File

- [kim-et-al-2024-room-temperature-negative-differential-resistance-with-high-peak-current-in-mos2-wse2-heterostructures.pdf](https://mdr.nims.go.jp/filesets/b4c8dbf4-909a-43fd-ad0c-467080144daa/download) ([Detail](https://mdr.nims.go.jp/filesets/b4c8dbf4-909a-43fd-ad0c-467080144daa.md))

## Id

9be8942a-2ab6-41e3-be1b-5fd816a84cf2

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-14T04:58:11.760315Z

## Updated at

2025-02-14T07:30:51.704573Z

## Published at

2025-02-14T07:30:51.777336Z

## Doi



## First published url

https://doi.org/10.1021/acs.nanolett.3c04607

## Date published

2024-02-28

## Recorded date published

2024-2-28

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Room Temperature Negative Differential Resistance with High Peak Current
    in MoS<sub>2</sub>/WSe<sub>2</sub> Heterostructures
  title_type: original
  lang: en

## Description

- description: Two-dimensional transition metal dichalcogenide (2D TMD) semiconductors
    allow facile integration of p- and n-type materials without lattice mismatch.
    Here, we demonstrate gate-tunable n- and p-type junctions based on vertical heterostructures
    of MoS2 and WSe2 using van der Waals (vdW) contacts. The p-n junction shows negative
    differential resistance (NDR) due to Fowler-Nordheim (F-N) tunneling through the
    triangular barrier formed by applying a global back-gate bias (VGS). We also show
    that the integration of hexagonal boron nitride (h-BN) as an insulating tunnel
    barrier between MoS2 and WSe2 leads to the formation of sharp band edges and unintentional
    inelastic tunneling current. The devices based on vdW contacts, global VGS, and
    h-BN tunnel barriers exhibit NDR with a peak current (Ipeak) of 315 µA, suggesting
    that the approach may be useful for applications.
  description_type: abstract
  lang: und

## Creator

- name: Jung Ho Kim
  role: author
- name: Soumya Sarkar
  role: author
- name: Yan Wang
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Manish Chhowalla
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: 2D TMD semiconductors
  schema: not_defined
- subject: gate-tunable junctions
  schema: not_defined
- subject: negative differential resistance
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Nano Letters
  issn: '15306984'
  volume: '24'
  issue: '8'
  start_page: 2561
  end_page: 2566

## Conference



## Related item



## Funding

- identifier: EP/T001038/1
  funder_name: Engineering and Physical Sciences Research Council
- funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science
- identifier: EP/T026200/1
  funder_name: Engineering and Physical Sciences Research Council
- identifier: 23H02052
  funder_name: Japan Society for the Promotion of Science
- identifier: GA 101019828-2D-LOTTO
  funder_name: H2020 European Research Council

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: b4c8dbf4-909a-43fd-ad0c-467080144daa
  filename: kim-et-al-2024-room-temperature-negative-differential-resistance-with-high-peak-current-in-mos2-wse2-heterostructures.pdf
  content_type: application/pdf
  size: 3354550
  md5: 8d2d6bbbcde19be0684d9037719f2139

## Thumbnail

fileset_id: b4c8dbf4-909a-43fd-ad0c-467080144daa
filename: kim-et-al-2024-room-temperature-negative-differential-resistance-with-high-peak-current-in-mos2-wse2-heterostructures.pdf