Yu Yamaguchi
(National Institute for Materials Science)
;
Daiki Nishioka
(National Institute for Materials Science)
;
Wataru Namiki
(National Institute for Materials Science)
;
Takashi Tsuchiya
(National Institute for Materials Science)
;
Masataka Imura
(National Institute for Materials Science)
;
Yasuo Koide
(National Institute for Materials Science)
;
Tohru Higuchi
;
Kazuya Terabe
(National Institute for Materials Science)
Description:
(abstract)Physical reservoir computing (PRC) is useful for edge computing, although the challenge is to improve computational performance. In this study, we developed an inverted input method, that the inverted input is additionally applied to a physical reservoir together with the original input, to improve the performance of the ion-gating reservoir. The error in a second-order nonlinear equation task was 7.3×10-5, the lowest error in reported PRC to date. Improvement of high dimensionality by the method was confirmed to be the origin of the performance enhancement. This inverted input method is versatile enough to enhance the performance of any other PRC.
Rights:
Keyword: Physical reservoir computing, Ion-gating reservoir, Solid state ionics, Electric double layer transistor
Date published: 2024-02-01
Publisher: IOP Publishing
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.35848/1882-0786/ad2906
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Updated at: 2024-08-05 12:30:15 +0900
Published on MDR: 2024-08-05 12:30:15 +0900
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