# Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties

https://mdr.nims.go.jp/datasets/995715d7-0d5a-452d-8824-223f1575524b

## File

- [HVPE-aGa2O3-rapid growth200203.pdf](https://mdr.nims.go.jp/filesets/712dd539-1e38-4d95-9e9a-f6e0751ad7c6/download) ([Detail](https://mdr.nims.go.jp/filesets/712dd539-1e38-4d95-9e9a-f6e0751ad7c6.md))

## Id

995715d7-0d5a-452d-8824-223f1575524b

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-07T06:13:32.959108Z

## Updated at

2024-01-22T00:40:57.968503Z

## Published at

2024-01-22T03:30:19.334749Z

## Doi

https://doi.org/10.48505/nims.4538

## First published url

https://doi.org/10.1088/1361-6641/ab7843

## Date published

2020-05-01

## Recorded date published

2020-5-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: HCl添加によるα-Ga2O3の高速HVPE成長および原料供給条件が結晶特性に及ぼす影響
  title_type: alternative
  lang: ja
- title: Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect
    of precursor supply conditions on crystal properties
  title_type: original
  lang: en

## Description

- description: 'We investigated the effect of supply conditions of GaCl, O2, and additional
    HCl on the growth rate of (0001) alpha-Ga2O3 by halide vapor phase epitaxy (HVPE)
    and the crystal properties. The parasitic gas-phase reaction was markedly suppressed
    by supplying HCl gas in addition to GaCl and O2, and a rapid growth rate as high
    as 101 um/h was achieved. Thermodynamic analysis revealed that the addition of
    HCl works to convert GaCl into GaCl3, and it was elucidated that the parasitic
    gas-phase reaction was suppressed because alpha-Ga2O3 was grown through the chemical
    reaction of GaCl3 and the oxygen sources (O2 and/or H2O), the equilibrium constant
    of which is much smaller than that when GaCl is used. The full-width half-maximum
    (FWHM) of the X-ray rocking curve of 10-12 diffraction measured in skew-symmetric
    geometry decreased with increasing growth rate by increasing the precursor supply,
    whereas that of symmetric 0006 diffraction did not show a systematic tendency. '
  description_type: abstract
  lang: eng

## Creator

- name: Yuichi Oshima
  role: author
- name: Katsuaki Kawara
  role: author
- name: Takayoshi Oshima
  role: author
- name: Mitsuru Okigawa
  role: author
- name: Takashi Shinohe
  role: author

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: α-Ga2O3
  schema: not_defined
- subject: HVPE
  schema: not_defined

## Rights

- description: "© 2020 IOP Publishing Ltd<br>\r\nThis is an author-created, un-copyedited
    version of an article accepted for publication/published\r\nin Semiconductor Science
    and Technology. IOP Publishing Ltd is not responsible for any errors or omissions
    in this version of the manuscript or\r\nany version derived from it. The Version
    of Record is available online at https://doi.org/10.1088/1361-6641/ab7843.\r\n"
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  issn: '02681242'
  volume: '35'
  issue: '5'
  start_page: 55022
  end_page: 55022

## Conference



## Related item



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## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



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## Fileset

- id: 712dd539-1e38-4d95-9e9a-f6e0751ad7c6
  filename: HVPE-aGa2O3-rapid growth200203.pdf
  content_type: application/pdf
  size: 743405
  md5: 377e19015558d3fa8c4d25854730f462

## Thumbnail

fileset_id: 712dd539-1e38-4d95-9e9a-f6e0751ad7c6
filename: HVPE-aGa2O3-rapid growth200203.pdf