# Enhanced photoluminescence intensity of buried InGaAs/GaAs(001) quantum wells by sulfur termination

https://mdr.nims.go.jp/datasets/98e8cac5-023c-4abe-a447-34dd4492fad0

## File

- [Ma_2024_Jpn._J._Appl._Phys._63_121002.pdf](https://mdr.nims.go.jp/filesets/713cb90c-5582-44d3-aada-bc3ee08e1ff0/download) ([Detail](https://mdr.nims.go.jp/filesets/713cb90c-5582-44d3-aada-bc3ee08e1ff0.md))

## Id

98e8cac5-023c-4abe-a447-34dd4492fad0

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-12-19T04:48:00.971491Z

## Updated at

2025-02-06T03:31:18.732105Z

## Published at

2025-02-06T03:31:18.809436Z

## Doi



## First published url

https://doi.org/10.35848/1347-4065/ad9802

## Date published

2024-12-02

## Recorded date published

2024-12-2

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Enhanced photoluminescence intensity of buried InGaAs/GaAs(001) quantum wells
    by sulfur termination
  title_type: original
  lang: en

## Description

- description: In this study, we systematically investigated the effects of S termination
    by (NH4)2Sx treatment on enhancement of the photoluminescence (PL) properties
    of buried InGaAs/GaAs(001) quantum wells (QWs). X-ray photoelectron spectroscopy
    (XPS) and PL measurements revealed that the (NH4)2Sx treatment suppresses the
    formation of surface oxides, especially arsenic oxides, and enhances the PL intensity
    of QWs. Clear correlation between the PL and XPS results suggest that greater
    PL intensity is attributable to a reduction in the number of nonradiative recombination
    centers at the surface caused by arsenic oxide formation.
  description_type: abstract
  lang: und

## Creator

- name: Zhao Ma
  role: author
  orcid: https://orcid.org/0000-0003-0151-8592
- name: Takaaki Mano
  role: author
  orcid: https://orcid.org/0000-0002-6955-260X
- name: Akihiro Ohtake
  role: author
  orcid: https://orcid.org/0000-0002-3519-4613
- name: Takashi Kuroda
  role: author
  orcid: https://orcid.org/0000-0001-6445-7673

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: Sulfur
  schema: not_defined
- subject: Termination
  schema: not_defined
- subject: Oxide
  schema: not_defined
- subject: Photoluminescence
  schema: not_defined
- subject: GaAs
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Japanese Journal of Applied Physics
  issn: '00214922'
  volume: '63'
  issue: '12'
  article_number: '121002'

## Conference



## Related item



## Funding

- identifier: JPJ004596
  funder_name: Innovative Science and Technology Initiative for Security

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 713cb90c-5582-44d3-aada-bc3ee08e1ff0
  filename: Ma_2024_Jpn._J._Appl._Phys._63_121002.pdf
  content_type: application/pdf
  size: 1431473
  md5: 951f5a931bf4d2784bfd56dc22fcbd42

## Thumbnail

fileset_id: 713cb90c-5582-44d3-aada-bc3ee08e1ff0
filename: Ma_2024_Jpn._J._Appl._Phys._63_121002.pdf