# Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing Temperature up to 900 °C

https://mdr.nims.go.jp/datasets/98cac5be-9527-4493-8046-67d4a984aec2

## File

- [shrine20230224-1595-kihond.pdf](https://mdr.nims.go.jp/filesets/0d00e204-fd0a-464e-baa8-1d3c7394e8c2/download) ([Detail](https://mdr.nims.go.jp/filesets/0d00e204-fd0a-464e-baa8-1d3c7394e8c2.md))

## Id

98cac5be-9527-4493-8046-67d4a984aec2

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-02-24T11:49:16.196798Z

## Updated at

2024-01-05T13:12:52.885543Z

## Published at

2023-02-28T02:07:13.999528Z

## Doi



## First published url

https://doi.org/10.3390/coatings11040470

## Date published

2021-04-17

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing
    Temperature up to 900 °C
  title_type: original
  lang: en

## Description

- description: Ohmic contact with high thermal stability is essential to promote hydrogen-terminated
    diamond (H-diamond) based electronic devices for high-temperature applications.
    Here, Ohmic contact characteristics of Ni/H-diamond at annealing temperature up
    to 900 ℃ are investigated. The measured current-voltage curves and deduced specific
    contact resistance ( ) are used to evaluate the quality of contact properties.
    Schottky contacts are formed for the as-received and 300 ℃-annealed Ni/H-diamond.
    When the annealing temperature is increased to 500 ℃, Ohmic contact properties
    are formed with the   of 1.5×10-3 Ω cm2 for the Ni/H-diamond. As the annealing
    temperature rises to 900 ℃, the   is determined to be as low as  6.0 ×10-5 Ω cm2.
    It is believed that the formation of Ni-related carbides at the Ni/H-diamond interface
    promotes the decrease of  . The Ni metal is extremely promising to be used as
    Ohmic contact electrode for H-diamond-based electronic devices at temperature
    up to 900 ℃.
  description_type: abstract
  lang: eng

## Creator

- name: Xiaolu Yuan
  role: author
- name: Jiangwei Liu
  role: author
- name: Jinlong Liu
  role: author
  orcid: https://orcid.org/0000-0003-2580-7401
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Junjun Wei
  role: author
- name: Bo Da
  role: author
  orcid: https://orcid.org/0000-0002-0785-8662
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Chengming Li
  role: author
- name: Yasuo Koide
  role: author
  orcid: https://orcid.org/0000-0001-8321-9822
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: MDPI

## Managing organization



## Keyword

- subject: hydrogen-terminated diamond (H-diamond)
  schema: not_defined
- subject: ohmic contact
  schema: not_defined
- subject: Ni
  schema: not_defined
- subject: specific contact resistance
  schema: not_defined
- subject: high-temperature
  schema: not_defined

## Rights

- description: Creative Commons BY Attribution 4.0 International
  identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Coatings
  issn: '20796412'
  volume: '11'
  issue: '4'
  article_number: '470'

## Conference



## Related item



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## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



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## Fileset

- id: 0d00e204-fd0a-464e-baa8-1d3c7394e8c2
  filename: shrine20230224-1595-kihond.pdf
  content_type: application/pdf
  size: 3380314
  md5: c29a43b84e0356eff42a5505c7f09a00

## Thumbnail

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filename: shrine20230224-1595-kihond.pdf