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説明:

Ohmic contact with high thermal stability is essential to promote hydrogen-terminated diamond (H-diamond) based electronic devices for high-temperature applications. Here, Ohmic contact characteristics of Ni/H-diamond at annealing temperature up to 900 ℃ are investigated. The measured current-voltage curves and deduced specific contact resistance ( ) are used to evaluate the quality of contact properties. Schottky contacts are formed for the as-received and 300 ℃-annealed Ni/H-diamond. When the annealing temperature is increased to 500 ℃, Ohmic contact properties are formed with the of 1.5×10-3 Ω cm2 for the Ni/H-diamond. As the annealing temperature rises to 900 ℃, the is determined to be as low as 6.0 ×10-5 Ω cm2. It is believed that the formation of Ni-related carbides at the Ni/H-diamond interface promotes the decrease of . The Ni metal is extremely promising to be used as Ohmic contact electrode for H-diamond-based electronic devices at temperature up to 900 ℃.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

  Creative Commons BY Attribution 4.0 International

キーワード: hydrogen-terminated diamond (H-diamond), ohmic contact, Ni, specific contact resistance, high-temperature

刊行年月日: 2021-04-17

出版者: MDPI

掲載誌:

• Coatings (ISSN: 20796412) vol. 11 issue. 4 470

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.3390/coatings11040470

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更新時刻: 2024-01-05 22:12:52 +0900

MDRでの公開時刻: 2023-02-28 11:07:13 +0900