# Exciton spectroscopy and unidirectional transport in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride https://mdr.nims.go.jp/datasets/98b3d28c-6fcf-43e1-a3bc-eb1171f6cf68 ## File - [s41699-022-00354-0.pdf](https://mdr.nims.go.jp/filesets/777d883e-2051-41fd-b382-ba42f1fe28c7/download) ([Detail](https://mdr.nims.go.jp/filesets/777d883e-2051-41fd-b382-ba42f1fe28c7.md)) ## Id 98b3d28c-6fcf-43e1-a3bc-eb1171f6cf68 ## Local identifier ## Visibility open_to_public ## State published ## Created at 2025-02-27T05:32:35.413761Z ## Updated at 2025-02-27T23:31:11.296105Z ## Published at 2025-02-27T23:31:11.400647Z ## Doi ## First published url https://doi.org/10.1038/s41699-022-00354-0 ## Date published 2022-11-19 ## Recorded date published ## Resource type journal_article ## Manuscript type vor ## Collection ## Title - title: Exciton spectroscopy and unidirectional transport in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride title_type: original lang: en ## Description - description: Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure samples due to large inhomogeneous broadening of the optical transitions. Here we perform optical spectroscopy at T = 4 K and also at 300 K to access the optical transitions in CVD grown MoSe2-WSe2 lateral heterostructures that are transferred from the growth-substrate and are encapsulated in hBN. Photoluminescence (PL), reflectance contrast and Raman spectroscopy reveal considerably narrowed optical transition linewidth similar to high quality exfoliated monolayers. In high-resolution transmission electron microscopy (HRTEM) we find near-atomically sharp junctions with a typical extent of 3 nm for the covalently bonded MoSe2-WSe2. In PL imaging experiments we find effective excitonic diffusion length that are longer for WSe2 than for MoSe2 at low T=4 K, whereas at 300 K this trend is reversed. description_type: abstract lang: und ## Creator - name: Dorian Beret role: author - name: Ioannis Paradisanos role: author - name: Hassan Lamsaadi role: author - name: Ziyang Gan role: author - name: Emad Najafidehaghani role: author - name: Antony George role: author - name: Tibor Lehnert role: author - name: Johannes Biskupek role: author - name: Ute Kaiser role: author - name: Shivangi Shree role: author - name: Ana Estrada-Real role: author - name: Delphine Lagarde role: author - name: Xavier Marie role: author - name: Pierre Renucci role: author - name: Kenji Watanabe role: author orcid: https://orcid.org/0000-0003-3701-8119 organization: National Institute for Materials Science ror: https://ror.org/026v1ze26 - name: Takashi Taniguchi role: author orcid: https://orcid.org/0000-0002-1467-3105 organization: National Institute for Materials Science ror: https://ror.org/026v1ze26 - name: Sébastien Weber role: author - name: Vincent Paillard role: author - name: Laurent Lombez role: author - name: Jean-Marie Poumirol role: author - name: Andrey Turchanin role: author - name: Bernhard Urbaszek role: author ## Contact agent ## Publisher organization: Springer Science and Business Media LLC ## Managing organization ## Keyword - subject: Lateral edge epitaxy schema: not_defined - subject: MoSe2-WSe2 heterostructures schema: not_defined - subject: excitonic diffusion schema: not_defined ## Rights - identifier: https://creativecommons.org/licenses/by/4.0/ ## Other identifier(s) ## Data origin ## Embargo ## Journal - title: npj 2D Materials and Applications issn: '23977132' volume: '6' issue: '1' article_number: '84' ## Conference ## Related item ## Funding ## Instrument ## Instrument operator ## Instrument managing organization ## Measurement method ## Specimen ## Chemical composition ## Structure for specimen ## Structural feature for specimen ## Specific property for specimen ## Process for specimen treatment ## Computational method ## Energy level/transition state ## Software ## Custom property ## Fileset - id: 777d883e-2051-41fd-b382-ba42f1fe28c7 filename: s41699-022-00354-0.pdf content_type: application/pdf size: 3814572 md5: b37766ea14115d5d2cc8806cebf46a7b ## Thumbnail fileset_id: 777d883e-2051-41fd-b382-ba42f1fe28c7 filename: s41699-022-00354-0.pdf