# Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells

https://mdr.nims.go.jp/datasets/96d8986d-f410-4020-a4d7-6d8548a91b12

## File

- [Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells.pdf](https://mdr.nims.go.jp/filesets/3fbb48bb-440e-4e0d-9c0e-620455079c6e/download) ([Detail](https://mdr.nims.go.jp/filesets/3fbb48bb-440e-4e0d-9c0e-620455079c6e.md))

## Id

96d8986d-f410-4020-a4d7-6d8548a91b12

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-09-27T00:51:14.614227Z

## Updated at

2024-01-05T13:12:51.715541Z

## Published at

2023-10-04T04:30:15.221656Z

## Doi

https://doi.org/10.48505/nims.4238

## First published url

https://doi.org/10.1021/acs.nanolett.2c01479

## Date published

2022-09-14

## Recorded date published

2022-9-14

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum
    Wells
  title_type: original
  lang: en

## Description

- description: The compositional and structural investigations of threading dislocations
    (TDs) in InGaN/GaN multiple quantum wells were carried out using correlative transmission
    electron microscopy (TEM) and atom probe tomography (APT). The correlative TEM/APT
    analysis on the same TD reveals that the indium atoms are diffused along the TD
    and its concentration decreases with distance from the InGaN layer. On the basis
    of the results, we directly observed that the indium atoms originating from the
    InGaN layer diffuse toward the epitaxial GaN surface through the TD, and it is
    considered to have occurred via the pipe diffusion mechanism induced by strain
    energy relaxation.
  description_type: abstract
  lang: eng

## Creator

- name: Yudai Yamaguchi
  role: author
- name: Yuya Kanitani
  role: author
- name: Yoshihiro Kudo
  role: author
- name: Jun Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Tadakatsu Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Kazuhiro Hono
  role: author
  orcid: https://orcid.org/0000-0001-7367-0193
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Shigetaka Tomiya
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: InGaN
  schema: not_defined
- subject: dislocation
  schema: not_defined
- subject: pipe diffusion
  schema: not_defined
- subject: atom probe tomography
  schema: not_defined
- subject: transmission electron microscopy
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: NANO LETTERS
  issn: '15306984'
  volume: '22'
  issue: '17'
  start_page: 6930
  end_page: 6935

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 3fbb48bb-440e-4e0d-9c0e-620455079c6e
  filename: Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum
    Wells.pdf
  content_type: application/pdf
  size: 568155
  md5: 90c0ad2900a24659d81f072e105fe9b5

## Thumbnail

fileset_id: 3fbb48bb-440e-4e0d-9c0e-620455079c6e
filename: Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum
  Wells.pdf