# Manipulation of the anomalous Hall effect in magnetic topological insulator heterostructure MnBi2Te4/Bi2Te3 by Si substrate surface engineering

https://mdr.nims.go.jp/datasets/956df3fd-f329-4747-b144-86fc97a2d568

## File

- [APL25-AR-01605.pdf](https://mdr.nims.go.jp/filesets/e45f63b9-6a7a-43f3-bd54-759f5a00d56c/download) ([Detail](https://mdr.nims.go.jp/filesets/e45f63b9-6a7a-43f3-bd54-759f5a00d56c.md))

## Id

956df3fd-f329-4747-b144-86fc97a2d568

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-12-27T05:47:46.840263Z

## Updated at

2026-01-05T06:31:29.474042Z

## Published at

2026-01-05T23:19:15.286064Z

## Doi

https://doi.org/10.48505/nims.6098

## First published url

https://doi.org/10.1063/5.0266580

## Date published

2025-11-24

## Recorded date published

2025-11-24

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Manipulation of the anomalous Hall effect in magnetic topological insulator
    heterostructure MnBi2Te4/Bi2Te3 by Si substrate surface engineering
  title_type: original
  lang: en

## Description

- description: We developed an in situ Hall measurement setup and measured the anomalous
    Hall effect (AHE) in magnetic topological insulator heterostructures MnBi2Te4/Bi2Te3
    grown on different Si(111) substrate surfaces. For the sample grown on the Si(111)-7x7
    surface, the AHE signal appears at 15 K and becomes larger by further cooling,
    showing that the Curie temperature, Tc,  is 15 K. In contrast, although the Tc
    is the same, the AHE signal shows a local maximum at 10 K for the sample grown
    on the beta-Bi/Si(111)-√3x√3 surface. A plausible explanation for this peculiar
    behavior is the enhanced skew scattering caused by the Bi layer, or the presence
    of the states localized at the interfacial Bi layer, which will affect the Berry
    curvature of the system. Our results demonstrate the possibility to artificially
    control the property of a two-dimensional magnet by modification of the substrate
    surface with a single monatomic layer.
  description_type: abstract
  lang: und

## Creator

- name: K. Ishihara
  role: author
- name: S. Ichinokura
  role: author
  orcid: https://orcid.org/0000-0002-7968-4016
  organization: National Institute for Materials Science
- name: S. V. Eremeev
  role: author
- name: T. T. Sasaki
  role: author
  orcid: https://orcid.org/0000-0002-5952-7638
  organization: National Institute for Materials Science
- name: R. Takada
  role: author
- name: H. Nishimichi
  role: author
- name: R. Akiyama
  role: author
- name: E. V. Chulkov
  role: author
- name: T. Hirahara
  role: author

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: anomalous Hall effect
  schema: not_defined
- subject: magnetic topological insulator
  schema: not_defined
- subject: heterostructure
  schema: not_defined
- subject: MnBi2Te4/Bi2Te3
  schema: not_defined

## Rights

- description: "This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in K. Ishihara, S. Ichinokura, S. V. Eremeev, T. T. Sasaki, R. Takada, H. Nishimichi,
    R. Akiyama, E. V. Chulkov, T. Hirahara; Manipulation of the anomalous Hall effect
    in magnetic topological insulator heterostructure MnBi2Te4/Bi2Te3 by Si substrate
    surface engineering. Appl. Phys. Lett. 24 November 2025; 127 (21): 211601 and
    may be found at https://doi.org/10.1063/5.0266580.\r\n"
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '127'
  issue: '21'
  article_number: '211601'

## Conference



## Related item



## Funding

- identifier: 18H03877
  funder_name: Japan Society for the Promotion of Science
- identifier: 22H00293
  funder_name: Japan Society for the Promotion of Science
- identifier: H30-084
  funder_name: Murata Science and Education Foundation
- funder_name: Asahi Glass Foundation
- identifier: '0321083-A'
  funder_name: Iketani Science and Technology Foundation
- funder_name: Support for Tokyo Tech Advanced Reseachers
- identifier: FWRW-2022-0001
  funder_name: Government research assignment for ISPMS SB RAS
- identifier: Project 116812735
  funder_name: Saint-Petersburg State University
- identifier: 23H00268
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



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## Computational method



## Energy level/transition state



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## Fileset

- id: e45f63b9-6a7a-43f3-bd54-759f5a00d56c
  filename: APL25-AR-01605.pdf
  content_type: application/pdf
  size: 1366664
  md5: c5841675ca0aa8363458314327e1d165

## Thumbnail

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filename: APL25-AR-01605.pdf