論文 Manipulation of the anomalous Hall effect in magnetic topological insulator heterostructure MnBi2Te4/Bi2Te3 by Si substrate surface engineering

K. Ishihara ; S. Ichinokura ORCID (National Institute for Materials Science) ; S. V. Eremeev ; T. T. Sasaki SAMURAI ORCID (National Institute for Materials Science) ; R. Takada ; H. Nishimichi ; R. Akiyama ; E. V. Chulkov ; T. Hirahara

コレクション

引用
K. Ishihara, S. Ichinokura, S. V. Eremeev, T. T. Sasaki, R. Takada, H. Nishimichi, R. Akiyama, E. V. Chulkov, T. Hirahara. Manipulation of the anomalous Hall effect in magnetic topological insulator heterostructure MnBi2Te4/Bi2Te3 by Si substrate surface engineering. Applied Physics Letters. 2025, 127 (21), 211601. https://doi.org/10.1063/5.0266580

説明:

(abstract)

We developed an in situ Hall measurement setup and measured the anomalous Hall effect (AHE) in magnetic topological insulator heterostructures MnBi2Te4/Bi2Te3 grown on different Si(111) substrate surfaces. For the sample grown on the Si(111)-7x7 surface, the AHE signal appears at 15 K and becomes larger by further cooling, showing that the Curie temperature, Tc, is 15 K. In contrast, although the Tc is the same, the AHE signal shows a local maximum at 10 K for the sample grown on the beta-Bi/Si(111)-√3x√3 surface. A plausible explanation for this peculiar behavior is the enhanced skew scattering caused by the Bi layer, or the presence of the states localized at the interfacial Bi layer, which will affect the Berry curvature of the system. Our results demonstrate the possibility to artificially control the property of a two-dimensional magnet by modification of the substrate surface with a single monatomic layer.

権利情報:

  • In Copyright
    This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in K. Ishihara, S. Ichinokura, S. V. Eremeev, T. T. Sasaki, R. Takada, H. Nishimichi, R. Akiyama, E. V. Chulkov, T. Hirahara; Manipulation of the anomalous Hall effect in magnetic topological insulator heterostructure MnBi2Te4/Bi2Te3 by Si substrate surface engineering. Appl. Phys. Lett. 24 November 2025; 127 (21): 211601 and may be found at https://doi.org/10.1063/5.0266580.

キーワード: anomalous Hall effect, magnetic topological insulator, heterostructure, MnBi2Te4/Bi2Te3

刊行年月日: 2025-11-24

出版者: AIP Publishing

掲載誌:

  • Applied Physics Letters (ISSN: 00036951) vol. 127 issue. 21 211601

研究助成金:

  • Japan Society for the Promotion of Science 18H03877
  • Japan Society for the Promotion of Science 22H00293
  • Murata Science and Education Foundation H30-084
  • Asahi Glass Foundation
  • Iketani Science and Technology Foundation 0321083-A
  • Support for Tokyo Tech Advanced Reseachers
  • Government research assignment for ISPMS SB RAS FWRW-2022-0001
  • Saint-Petersburg State University Project 116812735
  • Japan Society for the Promotion of Science 23H00268

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6098

公開URL: https://doi.org/10.1063/5.0266580

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更新時刻: 2026-01-05 15:31:29 +0900

MDRでの公開時刻: 2026-01-06 08:19:15 +0900

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