K. Ishihara
;
S. Ichinokura
(National Institute for Materials Science)
;
S. V. Eremeev
;
T. T. Sasaki
(National Institute for Materials Science)
;
R. Takada
;
H. Nishimichi
;
R. Akiyama
;
E. V. Chulkov
;
T. Hirahara
説明:
(abstract)We developed an in situ Hall measurement setup and measured the anomalous Hall effect (AHE) in magnetic topological insulator heterostructures MnBi2Te4/Bi2Te3 grown on different Si(111) substrate surfaces. For the sample grown on the Si(111)-7x7 surface, the AHE signal appears at 15 K and becomes larger by further cooling, showing that the Curie temperature, Tc, is 15 K. In contrast, although the Tc is the same, the AHE signal shows a local maximum at 10 K for the sample grown on the beta-Bi/Si(111)-√3x√3 surface. A plausible explanation for this peculiar behavior is the enhanced skew scattering caused by the Bi layer, or the presence of the states localized at the interfacial Bi layer, which will affect the Berry curvature of the system. Our results demonstrate the possibility to artificially control the property of a two-dimensional magnet by modification of the substrate surface with a single monatomic layer.
権利情報:
キーワード: anomalous Hall effect, magnetic topological insulator, heterostructure, MnBi2Te4/Bi2Te3
刊行年月日: 2025-11-24
出版者: AIP Publishing
掲載誌:
研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.6098
公開URL: https://doi.org/10.1063/5.0266580
関連資料:
その他の識別子:
連絡先:
更新時刻: 2026-01-05 15:31:29 +0900
MDRでの公開時刻: 2026-01-06 08:19:15 +0900
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APL25-AR-01605.pdf
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