# A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures

https://mdr.nims.go.jp/datasets/94e92e56-e296-4f09-b92d-d93a0866662c

## File

- [1-s2.0-S1369800125003439-main.pdf](https://mdr.nims.go.jp/filesets/a7b64f8c-8110-430b-9f0d-cad93f09bc9d/download) ([Detail](https://mdr.nims.go.jp/filesets/a7b64f8c-8110-430b-9f0d-cad93f09bc9d.md))

## Id

94e92e56-e296-4f09-b92d-d93a0866662c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-05-07T22:50:45.072973Z

## Updated at

2025-05-08T03:30:16.588924Z

## Published at

2025-05-08T03:24:21.630403Z

## Doi



## First published url

https://doi.org/10.1016/j.mssp.2025.109606

## Date published

2025-05-07

## Recorded date published

2025-9

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: A three-step surface treatment and its impacts on electrical properties of
    c- and m-face GaN/Al2O3 MOS structures
  title_type: original
  lang: en

## Description

- description: " In this study, a three-step surface treatment, composed of SiO2 deposition,\r\n
    subsequent annealing, and SiO2 removal, is adopted for the fabrication of\r\n
    c- and m-plane GaN/Al2O3 MOS structures, and the impact of the pro\r\nposed process
    on electrical properties and its crystal face dependence are\r\n systematically
    investigated. While no significant changes are observed after\r\n the proposed
    surface treatment for m-face GaN, an identical process causes\r\n changes in the
    properties of c-face GaN MOS structures: an about 0.2V\r\n lower flat-band voltage
    (VFB) and an about 0.2eV higher conduction band\r\n offset, associated with a
    change in the thickness or crystalline quality of a\r\n gallium oxide (GaOx) layer
    on the c-face GaN surface. The modified energy\r\n band alignment leads to a reduced
    gate leakage current, reducing the VFB\r\n drift after high-field positive bias
    stress (4.5MV/cm) almost by half only for\r\n c-face GaN MOS structures. The fact
    that even an identical process has a\r\n crystal face-dependent impact on the
    properties of GaN MOS structures is\r\n important in developing the fabrication
    process of GaN planer and trench\r\n MOSFETs."
  description_type: abstract
  lang: und

## Creator

- name: Masahiro Hara
  role: author
  orcid: https://orcid.org/0000-0001-9748-8011
- name: Toshihide Nabatame
  role: author
  orcid: https://orcid.org/0000-0002-5973-0230
- name: Yoshihiro Irokawa
  role: author
  orcid: https://orcid.org/0000-0002-6531-4356
- name: Tomomi Sawada
  role: author
- name: Manami Miyamoto
  role: author
- name: Hiromi Miura
  role: author
- name: Tsunenobu Kimoto
  role: author
- name: Yasuo Koide
  role: author

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: GaN
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Materials Science in Semiconductor Processing
  issn: '13698001'
  volume: '196'
  article_number: '109606'

## Conference



## Related item



## Funding

- identifier: JPJ009777
  funder_name: Ministry of Education, Culture, Sports, Science and Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: a7b64f8c-8110-430b-9f0d-cad93f09bc9d
  filename: 1-s2.0-S1369800125003439-main.pdf
  content_type: application/pdf
  size: 3335681
  md5: f691cdd9481695847f61157c7e645f27

## Thumbnail

fileset_id: a7b64f8c-8110-430b-9f0d-cad93f09bc9d
filename: 1-s2.0-S1369800125003439-main.pdf