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説明:

We investigated the effects of the CoFeSiB soft magnetic layer thickness and annealing process on the magnetic field sensing and low-frequency 1/f noise characteristics of tunnel magnetoresistive (TMR) sensors. A thicker CoFeSiB layer improved the soft magnetic properties of the free layer, and the process order of device fabrication and annealing significantly influenced the 1/f noise characteristics of the TMR sensors. A magnetic field detectivity of 0.8 nT/Hz0.5 at 10 Hz was achieved in a single device TMR sensor annealed after the device fabrication, which suppressed both electrical and magnetic 1/f noise compared to the annealing performed before device fabrication. The spectral density of the 1/f noise voltage scaled linearly with the sensitivity of the sensor; thus, the detectivity showed an approximately constant value regardless of the change in sensitivity.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

  Copyright 2024 Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License.

キーワード: tunnel magnetoresistance, soft magnetic, magnetic sensor, noise, 1/f noise

刊行年月日: 2024-11-28

出版者: AIP Publishing

掲載誌:

• Journal of Applied Physics (ISSN: 00218979) vol. 136 issue. 20

研究助成金:

• Japan Society for the Promotion of Science 24K00932

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5029

公開URL: https://doi.org/10.1063/5.0231800

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更新時刻: 2024-11-28 16:30:13 +0900

MDRでの公開時刻: 2024-11-28 16:30:14 +0900