# Smart-cut-assisted fabrication of ultrathin diamond NEMS cantilevers

https://mdr.nims.go.jp/datasets/94e0c6aa-a1bd-4fc2-a823-696b4e23ca2a

## File

- [ICDCM2026_abstract.docx](https://mdr.nims.go.jp/filesets/4eefefeb-4077-4402-8caf-5438c8724d35/download) ([Detail](https://mdr.nims.go.jp/filesets/4eefefeb-4077-4402-8caf-5438c8724d35.md))

## Id

94e0c6aa-a1bd-4fc2-a823-696b4e23ca2a

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-10-13T05:20:29.372177Z

## Updated at

2026-10-16T01:58:21.037611Z

## Published at

2026-10-16T03:33:05.173675Z

## Doi

https://doi.org/10.48505/nims.8663

## First published url



## Date published



## Recorded date published



## Resource type

conference_paper

## Manuscript type

na

## Collection



## Title

- title: Smart-cut-assisted fabrication of ultrathin diamond NEMS cantilevers
  title_type: original
  lang: en

## Description

- description: "Ultrathin single-crystal diamond (SCD) cantilevers are highly promising
    for nanoelectromechanical systems (NEMS) because they combine nanoscale dimensions
    with exceptional mechanical robustness, low dissipation, and thermal stability.
    However, the reliable fabrication of sub-100 nm diamond cantilevers remains challenging.
    Here, we report a smart-cut-assisted thinning strategy for fabricating ultrathin
    diamond NEMS cantilevers with thicknesses down to ~50 nm.\r\nAs illustrated in
    Figure 1(a), the fabrication process starts from a microscale diamond cantilever,
    followed by sequential O2 etching to the submicron scale and reactive ion etching
    (RIE) thinning to the nanoscale cantilever region. This two-step thinning process
    enables controlled thickness reduction while preserving structural integrity.
    The fabricated devices exhibit well-defined cantilever geometries, as confirmed
    by the three-dimensional (3D) surface profile in Figure 1(b), showing a representative
    cantilever with a length of 60 µm, width of 8 µm, and thickness of ~50 nm. The
    surface quality of the diamond epilayer is further verified by the AFM image in
    Figure 1(c), which reveals a smooth morphology with a root-mean-square (RMS) roughness
    of 1.7 nm, indicating that the thinning process preserves good surface quality,
    which is important for minimizing surface-related dissipation in ultrathin NEMS
    devices.\r\nThe fabricated ultrathin cantilevers also demonstrate stable resonant
    behavior. As shown in Figure 1(d), Allan deviation analysis gives a minimum value
    of 4.9×10-6 at a bandwidth of 1 Hz, confirming good frequency stability of the
    ~50 nm-thick cantilever. Based on the mass-sensing relation, the minimum detectable
    mass reaches 6.16 × 10-19 kg. These results demonstrate that the smart-cut-assisted
    thinning strategy provides a reliable route for batch fabrication of ultrathin
    diamond NEMS cantilevers, establishing a promising platform for high-performance
    nanomechanical sensing."
  description_type: abstract
  lang: eng

## Creator

- name: Guo Chen
  role: author
  orcid: https://orcid.org/0009-0004-9263-5616
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group
- name: Wen Zhao
  role: author
  orcid: https://orcid.org/0000-0001-8159-8195
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group
- name: Zhaozong Zhang
  role: author
  orcid: https://orcid.org/0009-0003-8745-4469
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group
- name: Satoshi Koizumi
  role: author
  orcid: https://orcid.org/0000-0003-4961-5658
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group
- name: Meiyong Liao
  role: author
  orcid: https://orcid.org/0000-0003-1361-4266
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group

## Contact agent



## Publisher



## Managing organization



## Keyword

- subject: Diamond
  schema: not_defined
- subject: MEMS
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal



## Conference

name: 36th International Conference on Diamond and Carbon Materials (ICDCM 2026)
start_date: 2026-08-30
end_date: 2026-09-03
identifier: https://www.elsevier.com/events/conferences/all/international-conference-on-diamond-and-carbon-materials

## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 4eefefeb-4077-4402-8caf-5438c8724d35
  filename: ICDCM2026_abstract.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 314154
  md5: bea3424e31b57e80cfad8e54c5a41caa

## Thumbnail

fileset_id: 4eefefeb-4077-4402-8caf-5438c8724d35
filename: ICDCM2026_abstract.docx