# Interface engineering of HfO                    <sub>2</sub>                    -based ferroelectric devices for crystal phase control and enhanced ferroelectricity using atomic-layer-deposited ZrO                    <sub>2</sub>                    nucleation layers

https://mdr.nims.go.jp/datasets/94441818-697a-48e4-9a27-47035f323fa3

## File

- [T. Onaya and T. Nabatame, Jpn. J. Appl. Phys. 65, 080804 (2026)..pdf](https://mdr.nims.go.jp/filesets/bf54ea8d-cb9c-427d-acd5-e0831bc3a998/download) ([Detail](https://mdr.nims.go.jp/filesets/bf54ea8d-cb9c-427d-acd5-e0831bc3a998.md))

## Id

94441818-697a-48e4-9a27-47035f323fa3

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-07-13T07:21:42.734790Z

## Updated at

2026-07-13T08:01:06.412891Z

## Published at

2026-07-13T09:24:40.535619Z

## Doi



## First published url

https://doi.org/10.35848/1347-4065/ae5662

## Date published

2026-04-30

## Recorded date published

2026-4-30

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Interface engineering of HfO                    <sub>2</sub>                    -based
    ferroelectric devices for crystal phase control and enhanced ferroelectricity
    using atomic-layer-deposited ZrO                    <sub>2</sub>                    nucleation
    layers
  title_type: original
  lang: en

## Description

- description: 'Interface engineering is a key for high-performance HfO2-based ferroelectric
    devices. In this study, the fabrication techniques for HfO2-based thin films using
    atomic-layer-deposited ZrO2 nucleation layers (ALD-ZrO2-NLs), which are inserted
    at ferroelectric/electrode interfaces, are systematically summarized. ALD-ZrO2-NLs
    were found to promote crystallization and formation of the ferroelectric orthorhombic
    (O) phase in HfO2-based films, resulting in superior ferroelectricity. This is
    attributed to two critical roles of ALD-ZrO2-NLs: providing a seed layer that
    induces epitaxial-like grain growth because of the high degree of lattice matching
    between the pre-crystallized ALD-ZrO2-NL and the O phase of HfO2, and acting as
    a stressor layer that induces tensile stress due to the difference in thermal
    expansion coefficients during annealing process. In addition, improved reliability
    and a low-temperature fabrication process for HfO2-based thin films are demonstrated
    using ALD-ZrO2-NLs. These findings suggest that interface engineering using ALD-ZrO2-NLs
    is a promising approach for fabricating next-generation HfO2-based ferroelectric
    devices.'
  description_type: abstract
  lang: und

## Creator

- name: Takashi Onaya
  role: author
  orcid: https://orcid.org/0000-0002-2710-8623
  organization: National Institute for Materials Science
- name: Toshihide Nabatame
  role: author
  orcid: https://orcid.org/0000-0002-5973-0230
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: atomic layer deposition
  schema: not_defined
- subject: ferroelectric HfO2-based thin films
  schema: not_defined
- subject: memory devices
  schema: not_defined
- subject: interface engineering
  schema: not_defined
- subject: crystal phase control
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/
  date_licensed: 2026-05-06

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Japanese Journal of Applied Physics
  issn: '13474065'
  volume: '65'
  issue: '8'
  article_number: '080804'

## Conference



## Related item



## Funding

- identifier: JP24K17304
  funder_name: JSPS
- identifier: JP21J01667
  funder_name: JSPS
- identifier: JP20H02189
  funder_name: JSPS
- identifier: JP18J22998
  funder_name: JSPS
- identifier: JPMXS0320220213
  funder_name: MEXT

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: bf54ea8d-cb9c-427d-acd5-e0831bc3a998
  filename: T. Onaya and T. Nabatame, Jpn. J. Appl. Phys. 65, 080804 (2026)..pdf
  content_type: application/pdf
  size: 4034388
  md5: 90e31fd26e8968a3b041295d2b6d0547

## Thumbnail

fileset_id: bf54ea8d-cb9c-427d-acd5-e0831bc3a998
filename: T. Onaya and T. Nabatame, Jpn. J. Appl. Phys. 65, 080804 (2026)..pdf