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We have fabricated an asymmetric dual-grating gate bilayer graphene-based field effect 1 transistor (ADGG-GFET) with an integrated bowtie antenna. We characterized it at 4.5 K under THz 2 excitation, at different frequencies (0.15, 0.3 and 0.6 THz). The integration of the bowtie antenna 3 allows to obtain a significant increase in the photocurrent response (up to 8 nA) of the device at the 4 three frequencies in comparison to transistors with no antenna (1 nA). The photocurrent increase was 5 observed for all the studied values of the bias voltage applied to both the top and back gates. This 6 behavior was explained as due to the creation of regions of different carrier types (electrons or holes) 7 and concentration profiles (np, pn or pp+) along the channel that are modulated by the transistor 8 biasing. The biasing of both back and top gates could induce an opening of the gap of the bilayer 9 graphene channel leading to the observed behavior of the photocurrent.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Asymmetric dual-grating gate, Terahertz detector, photocurrent response

刊行年月日: 2024-02-19

出版者: MDPI AG

掲載誌:

• Nanomaterials (ISSN: 20794991) vol. 14 issue. 4 383

研究助成金:

• Spanish Agencia Estatal de Investigación PID2021-126483OB-I00
• Spanish Agencia Estatal de Investigación PID2022-136869NB-C33
• Universidad de Salamanca Research Program PIC2-2021-02
• Consejería de Educación, Junta de Castilla y León SA121P20
• Conselleria de Innovación, Universidades, Ciencia y Sociedad Digital of the Generalitat Valenciana MFA/2022/056
• Cooperative Research Project of the Research Institute of Electrical Communication, Tohoku University
• JSPS KAKENHI 21H04546

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.3390/nano14040383

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更新時刻: 2025-02-15 12:30:19 +0900

MDRでの公開時刻: 2025-02-15 12:30:19 +0900