E. Abidi
;
A. Khan
;
J. A. Delgado-Notario
;
V. Clericó
;
J. Calvo-Gallego
;
T. Taniguchi
(National Institute for Materials Science)
;
K. Watanabe
(National Institute for Materials Science)
;
T. Otsuji
;
J. E. Velázquez
;
Y. M. Meziani
Description:
(abstract)We have fabricated an asymmetric dual-grating gate bilayer graphene-based field effect 1 transistor (ADGG-GFET) with an integrated bowtie antenna. We characterized it at 4.5 K under THz 2 excitation, at different frequencies (0.15, 0.3 and 0.6 THz). The integration of the bowtie antenna 3 allows to obtain a significant increase in the photocurrent response (up to 8 nA) of the device at the 4 three frequencies in comparison to transistors with no antenna (1 nA). The photocurrent increase was 5 observed for all the studied values of the bias voltage applied to both the top and back gates. This 6 behavior was explained as due to the creation of regions of different carrier types (electrons or holes) 7 and concentration profiles (np, pn or pp+) along the channel that are modulated by the transistor 8 biasing. The biasing of both back and top gates could induce an opening of the gap of the bilayer 9 graphene channel leading to the observed behavior of the photocurrent.
Rights:
Keyword: Asymmetric dual-grating gate, Terahertz detector, photocurrent response
Date published: 2024-02-19
Publisher: MDPI AG
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.3390/nano14040383
Related item:
Other identifier(s):
Contact agent:
Updated at: 2025-02-15 12:30:19 +0900
Published on MDR: 2025-02-15 12:30:19 +0900
Filename | Size | |||
---|---|---|---|---|
Filename |
nanomaterials-14-00383.pdf
(Thumbnail)
application/pdf |
Size | 3.63 MB | Detail |