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説明:

In this study, we aim to investigate the feasibility of epitaxial growth of a three- dimensional semiconductor on a two- dimensional substrate. In particular, we report for the first time on molecular beam epitaxy growth of cadmium tel- luride (CdTe) quantum wells on hexago- nal boron nitride (hBN). The presence of the quantum wells is confirmed by pho- toluminescence measurements conducted at helium temperatures. Growth of quantum wells on two dimensional, almost perfectly flat hBN appears to be very different from growth on bulk sub- strates, in particular it requires 70-100ºC lower temperatures.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Epitaxial growth, quantum wells, hexagonal boron nitride

刊行年月日: 2023-11-28

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Omega (ISSN: 24701343) vol. 8 issue. 47 p. 44745-44750

研究助成金:

• Ministry of Education, Culture, Sports, Science and Technology
• Narodowe Centrum Nauki 2021/41/B/ST3/04183
• Japan Society for the Promotion of Science 21H05233
• Japan Society for the Promotion of Science 23H02052

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acsomega.3c05699

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更新時刻: 2025-02-14 12:31:14 +0900

MDRでの公開時刻: 2025-02-14 12:31:14 +0900