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Description:

In this study, we aim to investigate the feasibility of epitaxial growth of a three- dimensional semiconductor on a two- dimensional substrate. In particular, we report for the first time on molecular beam epitaxy growth of cadmium tel- luride (CdTe) quantum wells on hexago- nal boron nitride (hBN). The presence of the quantum wells is confirmed by pho- toluminescence measurements conducted at helium temperatures. Growth of quantum wells on two dimensional, almost perfectly flat hBN appears to be very different from growth on bulk sub- strates, in particular it requires 70-100ºC lower temperatures.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Epitaxial growth, quantum wells, hexagonal boron nitride

Date published: 2023-11-28

Publisher: American Chemical Society (ACS)

Journal:

• ACS Omega (ISSN: 24701343) vol. 8 issue. 47 p. 44745-44750

Funding:

• Ministry of Education, Culture, Sports, Science and Technology
• Narodowe Centrum Nauki 2021/41/B/ST3/04183
• Japan Society for the Promotion of Science 21H05233
• Japan Society for the Promotion of Science 23H02052

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1021/acsomega.3c05699

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Updated at: 2025-02-14 12:31:14 +0900

Published on MDR: 2025-02-14 12:31:14 +0900