# Operational Stability Enhancement of Polymeric Organic Field‐Effect Transistors by Amorphous Perfluoropolymers Chemically Anchored to Gate Dielectric Surfaces

https://mdr.nims.go.jp/datasets/93361a36-184a-4c28-8447-18b4e1c3e10d

## File

- [200414_pBTTT_TC_Cytop_article-template_air_BW_withoutGA&SI.docx](https://mdr.nims.go.jp/filesets/3f0e5556-6877-4118-b596-41b7aca63eda/download) ([Detail](https://mdr.nims.go.jp/filesets/3f0e5556-6877-4118-b596-41b7aca63eda.md))

## Id

93361a36-184a-4c28-8447-18b4e1c3e10d

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-11-18T04:59:10.600985Z

## Updated at

2024-12-03T07:30:45.748303Z

## Published at

2024-12-03T07:30:46.060633Z

## Doi

https://doi.org/10.48505/nims.5074

## First published url

https://doi.org/10.1002/aelm.202000161

## Date published

2020-06-09

## Recorded date published

2020-7

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Operational Stability Enhancement of Polymeric Organic Field‐Effect Transistors
    by Amorphous Perfluoropolymers Chemically Anchored to Gate Dielectric Surfaces
  title_type: original
  lang: en

## Description

- description: Bias-stress resistance of polymer-based organic field-effect transistors
    (OFETs) is considerably enhanced by coating the gate dielectric surface with an
    amorphous perfluoropolymer (CYTOP). In bottom-gate (BG) OFETs offering a relatively
    simple fabrication process, the CYTOP coating causes a serious problem; that is,
    thin film formation of organic semiconducting polymers generally fails due to
    the lyophobic properties of CYTOP. This problem is solved by patterning the CYTOP
    coating layer with suitable designs. Here, a simple photo-patterning method is
    established using CYTOP terminated with amidosilyl functional groups. This method
    is composed of self-limited thinning process of CYTOP coating layers, exposure
    to vacuum ultraviolet light through a photomask, and development. BG/top-contact
    OFET arrays are fabricated using poly(2,5-bis(3-hexadecylthiophene-2-yl)thieno[3,2-b]thiophene)
    as the semiconducting polymer. The initial electrical properties and bias-stress
    resistance are compared with those of OFETs with octadecyltrichlorosilane (ODTS)-treated
    gate dielectrics. The CYTOP- and ODTS-OFETs show approximately the same initial
    electrical properties with very small device-to-device variation, while the CYTOP-OFETs
    exhibit much higher intrinsic bias-stress resistance. Therefore, the spin-coating
    combined with the simple photo-patterning method is a promising technique that
    can form polymeric organic semiconductor layers on CYTOP layers and produce BG
    OFETs exhibiting very high operational stability.
  description_type: abstract
  lang: und

## Creator

- name: Kirill Bulgarevich
  role: author
  orcid: https://orcid.org/0000-0003-1731-3153
  organization: National Institute for Materials Science
- name: Kenji Sakamoto
  role: author
  orcid: https://orcid.org/0000-0002-1379-874X
  organization: National Institute for Materials Science
- name: Takeshi Yasuda
  role: author
  orcid: https://orcid.org/0000-0003-4652-9105
  organization: National Institute for Materials Science
- name: Takeo Minari
  role: author
  orcid: https://orcid.org/0000-0001-7690-221X
  organization: National Institute for Materials Science
- name: Masayuki Takeuchi
  role: author
  orcid: https://orcid.org/0000-0002-0207-0665
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: organic field-effect transistors
  schema: not_defined
- subject: polymeric organic semiconductors
  schema: not_defined
- subject: hydrophobic-hydrophilic patterns
  schema: not_defined
- subject: bias-stress resistance
  schema: not_defined
- subject: amorphous perfluoropolymers
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Advanced Electronic Materials
  issn: 2199160X
  volume: '6'
  issue: '7'
  article_number: '2000161'

## Conference



## Related item



## Funding

- identifier: '25286045'
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Fileset

- id: 3f0e5556-6877-4118-b596-41b7aca63eda
  filename: 200414_pBTTT_TC_Cytop_article-template_air_BW_withoutGA&SI.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 1387311
  md5: 7994270a41f2c35354af349317db84b3

## Thumbnail

fileset_id: 3f0e5556-6877-4118-b596-41b7aca63eda
filename: 200414_pBTTT_TC_Cytop_article-template_air_BW_withoutGA&SI.docx