# Observation of weak localization in dual-gated bilayer <math>  <mrow>    <mi>Mo</mi>    <msub>      <mi>S</mi>      <mn>2</mn>    </msub>  </mrow></math>

https://mdr.nims.go.jp/datasets/9317ac97-f5be-44e7-8007-acff0cbc1d9e

## File

- [PhysRevResearch.6.013216.pdf](https://mdr.nims.go.jp/filesets/eae4f7ab-240d-4a8d-98d8-99e9e4ec881b/download) ([Detail](https://mdr.nims.go.jp/filesets/eae4f7ab-240d-4a8d-98d8-99e9e4ec881b.md))

## Id

9317ac97-f5be-44e7-8007-acff0cbc1d9e

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-18T04:13:31.400905Z

## Updated at

2025-02-23T13:47:29.344826Z

## Published at

2025-02-23T13:47:29.419128Z

## Doi



## First published url

https://doi.org/10.1103/physrevresearch.6.013216

## Date published

2024-02-28

## Recorded date published

2024-2

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: "Observation of weak localization in dual-gated bilayer \n<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"><mml:mrow><mml:mi>Mo</mml:mi><mml:msub><mml:mi
    mathvariant=\"normal\">S</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>"
  title_type: original
  lang: en

## Description

- description: We investigate the magnetoresistance of a dual-gated bilayer MoS2 encapsulated
    by hexagonal boron nitride. At low magnetic fields (|B| < 0.5 T), we observe a
    negative magnetoresistance, which we identify as the weak localization effect.
    We determine both the phase coherence length and mean free path as a function
    of electron density and displacement field. Both characteristic lengths show a
    similar monotonic increase with electron density, while they are not affected
    by the displacement field. We further investigate the dephasing mechanism by measuring
    the temperature dependence of the phase coherence length. Our results suggest
    that when only the lower spin-orbit split bands (K ↑, K′ ↓) contribute to transport
    is Coulomb scattering the dominant source of decoherence, while intervalley scattering
    seems not to play a relevant role in this regime. This observation is consistent
    with the picture of spin-polarized valleys (spin-valley locking), where the intrinsic
    spin-orbit coupling protects the spin states, rather than introducing an additional
    dephasing mechanism as in other materials.
  description_type: abstract
  lang: und

## Creator

- name: Tingyu Qu
  role: author
- name: Michele Masseroni
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Barbaros Özyilmaz
  role: author
- name: Thomas Ihn
  role: author
- name: Klaus Ensslin
  role: author

## Contact agent



## Publisher

organization: American Physical Society (APS)

## Managing organization



## Keyword

- subject: Magnetoresistance
  schema: not_defined
- subject: bilayer MoS2
  schema: not_defined
- subject: weak localization
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



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## Embargo



## Journal

- title: Physical Review Research
  issn: '26431564'
  volume: '6'
  issue: '1'
  article_number: '013216'

## Conference



## Related item



## Funding

- identifier: '95154'
  funder_name: European Research Council
- identifier: 19H05790
  funder_name: Japan Society for the Promotion of Science
- identifier: 20H00354
  funder_name: Japan Society for the Promotion of Science
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science

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## Measurement method



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## Fileset

- id: eae4f7ab-240d-4a8d-98d8-99e9e4ec881b
  filename: PhysRevResearch.6.013216.pdf
  content_type: application/pdf
  size: 3696472
  md5: 30459faef10a8483809ae27f2e287c67

## Thumbnail

fileset_id: eae4f7ab-240d-4a8d-98d8-99e9e4ec881b
filename: PhysRevResearch.6.013216.pdf