# Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

https://mdr.nims.go.jp/datasets/9237280e-1e6b-42a4-871b-6717b63d93c1

## Files

- [Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase.pdf](https://mdr.nims.go.jp/filesets/edb014a1-255d-4ac3-b517-cbeaabe3e316/download) ([Detail](https://mdr.nims.go.jp/filesets/edb014a1-255d-4ac3-b517-cbeaabe3e316.md))

## Id

9237280e-1e6b-42a4-871b-6717b63d93c1

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-05T14:29:49.275619Z

## Updated at

2024-01-29T07:48:15.100205Z

## Published at

2024-01-29T23:30:14.804125Z

## Doi



## First published url

https://doi.org/10.1063/1.5051058

## Date published

2019-02-01

## Recorded date published

2019-2-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: HVPE法によるα-Ga2O3のELO
  title_type: alternative
  lang: ja
- title: Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
  title_type: original
  lang: en

## Description

- description: 'We demonstrated epitaxial lateral overgrowth of a-Ga2O3 by halide
    vapor phase epitaxy. We formed stripe patterned or triangular lattice dot patterned
    SiO2 masks with window spacing of 5 – 20 um on (0001) a-Ga2O3 / sapphire
    template, and then a-Ga2O3 islands were regrown selectively on the windows. The
    islands grew vertically and laterally to coalesce each other. Facet control of
    a-Ga2O3 islands was achieved by controlling the growth temperature, and it was
    possible to develop inclined facets by decreasing the temperature. Transmission
    electron microscopy revealed that the crystal quality of the regrown a-Ga2O3 was
    significantly improved due to the blocking of dislocations by the mask, and due
    to the dislocation bending by the inclined facets. The dislocation density in
    the laterally '
  description_type: abstract
  lang: eng

## Creator

- name: Y. Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
- name: K. Kawara
  role: author
- name: T. Shinohe
  role: author
- name: T. Hitora
  role: author
- name: M. Kasu
  role: author
- name: S. Fujita
  role: author

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: α-Ga2O3
  schema: not_defined
- subject: HVPE
  schema: not_defined
- subject: ELO
  schema: not_defined
- subject: dislocation
  schema: not_defined

## Rights

- description: Copyright 2018 Author(s). This article is distributed under a Creative
    Commons Attribution (CC BY) License.
  identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: APL MATERIALS
  issn: 2166532X
  volume: '7'
  issue: '2'
  start_page: 22503
  end_page: 22503

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: edb014a1-255d-4ac3-b517-cbeaabe3e316
  filename: Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase.pdf
  content_type: application/pdf
  size: 3241377
  md5: 9758da98946e4e4313a9c9fcd6a45112

## Thumbnail

fileset_id: edb014a1-255d-4ac3-b517-cbeaabe3e316
filename: Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase.pdf