# Defect Passivation of 2D Semiconductors by Fixating Chemisorbed Oxygen Molecules via <i>h</i>‐BN Encapsulations

https://mdr.nims.go.jp/datasets/9204d4ba-e2f9-456d-bfcf-900449133c64

## File

- [Advanced Science - 2024 - Jung - Defect Passivation of 2D Semiconductors by Fixating Chemisorbed Oxygen Molecules via h‐BN.pdf](https://mdr.nims.go.jp/filesets/3172feb3-c0ca-48c3-a70d-850d302a0d8c/download) ([Detail](https://mdr.nims.go.jp/filesets/3172feb3-c0ca-48c3-a70d-850d302a0d8c.md))

## Id

9204d4ba-e2f9-456d-bfcf-900449133c64

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-14T00:53:03.379113Z

## Updated at

2025-02-14T03:32:08.549553Z

## Published at

2025-02-14T03:32:08.625364Z

## Doi



## First published url

https://doi.org/10.1002/advs.202310197

## Date published

2024-03-17

## Recorded date published

2024-6

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Defect Passivation of 2D Semiconductors by Fixating Chemisorbed Oxygen Molecules
    via <i>h</i>‐BN Encapsulations
  title_type: original
  lang: en

## Description

- description: Monolayer transition metal dichalcogenides (TMDs) have received great
    attention due to their fascinating physical properties and their potential for
    applications in novel semiconductor devices. However, the intrinsic physical properties
    of TMDs can be significantly altered by extrinsic disorders such as surface roughness
    and charge disorder induced by substrates. The encapsulation of TMDs using hexagonal
    boron nitride layers has been proposed as a practical way to reduce substrate-induced
    disorders. Despite experimental advances, the exact role of hexagonal boron nitride
    encapsulation remains unclear in terms of defect physics in TMDs. Here, we found
    that h-BN encapsulation effectively passivates the defects of monolayer WS2 by
    anchoring the adsorbed oxygen atoms onto monolayer WS2 crystals. Due to defect
    passivation by h-BN encapsulation, the excess electron density in monolayer WS2
    crystals is greatly lowered and stabilized, resulting in two orders of magnitude
    lower exciton annihilation by trion conversion and Auger recombination processes.
    Furthermore, the valley polarization becomes robust against the various excitation
    and ambient conditions in the h-BN encapsulated WS2 crystals. Our findings provide
    insight into the role of h-BN encapsulation and the related excitonic properties
    of 2D semiconductors.
  description_type: abstract
  lang: und

## Creator

- name: Jin‐Woo Jung
  role: author
- name: Hyeon‐Seo Choi
  role: author
- name: Young‐Jun Lee
  role: author
- name: Youngjae Kim
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Min‐Yeong Choi
  role: author
- name: Jae Hyuck Jang
  role: author
- name: Hee‐Suk Chung
  role: author
- name: Dohun Kim
  role: author
- name: Youngwook Kim
  role: author
- name: Chang‐Hee Cho
  role: author

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: Hexagonal boron nitride
  schema: not_defined
- subject: defect-related gap states
  schema: not_defined
- subject: WS2 crystals
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Advanced Science
  issn: '21983844'
  volume: '11'
  issue: '22'
  article_number: '2310197'

## Conference



## Related item



## Funding

- identifier: 2019R1A2C1088525
  funder_name: National Research Foundation of Korea
- identifier: RS‐2023‐00236798
  funder_name: National Research Foundation of Korea
- identifier: 2020R1C1C1006914
  funder_name: National Research Foundation of Korea
- identifier: 19H05790
  funder_name: Japan Society for the Promotion of Science
- identifier: 20H00354
  funder_name: Japan Society for the Promotion of Science
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science
- identifier: '20010542'
  funder_name: Ministry of Trade, Industry and Energy

## Instrument



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



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## Process for specimen treatment



## Computational method



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## Fileset

- id: 3172feb3-c0ca-48c3-a70d-850d302a0d8c
  filename: Advanced Science - 2024 - Jung - Defect Passivation of 2D Semiconductors
    by Fixating Chemisorbed Oxygen Molecules via h‐BN.pdf
  content_type: application/pdf
  size: 2365984
  md5: b0cd1b8aaaeb92589803e522bb2f708d

## Thumbnail

fileset_id: 3172feb3-c0ca-48c3-a70d-850d302a0d8c
filename: Advanced Science - 2024 - Jung - Defect Passivation of 2D Semiconductors
  by Fixating Chemisorbed Oxygen Molecules via h‐BN.pdf