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説明:

Zinc oxide (ZnO) has garnered much attention as a promising material for quantum devices due to its unique characteristics. To utilize the potential of ZnO for quantum devices, the development of fundamental technological elements such as high-speed readout and charge sensing capabilities has become essential. In this study, we address these challenges by demonstrating radio-frequency (rf) reflectometry and charge sensing in ZnO quantum dots, thus advancing the potential for qubit applications. A device is fabricated on a high-quality ZnO heterostructure, featuring gate-defined target and sensor quantum dots. The sensor dot, integrated into an rf resonator circuit, enables the detection of single-electron charges in the target dots. Using this setup, we observe the rf-detected charge stability diagram indicating the formation of few-electron double quantum dots and provide the first benchmark of the bandwidth, sensitivity, and readout fidelity of rf reflectometry.

権利情報:

• In Copyright
  

  ©2026 American Physical Society

キーワード: ZnO, Quantum dot, rf reflectometry

刊行年月日: 2026-07-21

出版者: American Physical Society (APS)

掲載誌:

• Physical Review Applied (ISSN: 23317019) vol. 26 issue. 1 014065

研究助成金:

• The Ebara Hatakeyama Memorial Foundation Research Grant
• FRiD Tohoku University
• “Advanced Research Infrastructure for Materials and Nanotechnology in Japan (ARIM)” of the Ministry of Education, Culture, Sports, Science and Technology JPMXP1224NM5072
• World Premier International Research Center Initiative (WPI), MEXT, Japan
• RIEC Fundamental Technology Center
• Laboratory for Nanoelectronics and Spintronics
• MEXT Leading Initiative for Excellent Young Researchers, Grants-in-Aid for Scientific Research 21K18592
• MEXT Leading Initiative for Excellent Young Researchers, Grants-in-Aid for Scientific Research 22H04958
• MEXT Leading Initiative for Excellent Young Researchers, Grants-in-Aid for Scientific Research 23H01789
• MEXT Leading Initiative for Excellent Young Researchers, Grants-in-Aid for Scientific Research 23H04490
• MEXT Leading Initiative for Excellent Young Researchers, Grants-in-Aid for Scientific Research 25H01504
• Tanigawa Foundation Research Grant, Maekawa Foundation Research Grant
• The Foundation for Technology Promotion of Electronic Circuit Board
• Iketani Science and Technology Foundation Research Grant

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6421

公開URL: https://doi.org/10.1103/mnt5-s859

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更新時刻: 2026-07-23 15:36:32 +0900

MDRでの公開時刻: 2026-07-23 18:30:07 +0900