# Thermal Conductivity and Thermal Boundary Resistance of Low–Dielectric Constant Interlayer Dielectrics in Advanced Very Large Scale Integration Interconnects https://mdr.nims.go.jp/datasets/911f88ea-5175-489d-848b-82c58f6647f8 ## File - [Manuscript_ACS AEM.docx](https://mdr.nims.go.jp/filesets/d06bb276-1c7f-4a48-8a6c-ba4355e91896/download) ([Detail](https://mdr.nims.go.jp/filesets/d06bb276-1c7f-4a48-8a6c-ba4355e91896.md)) ## Id 911f88ea-5175-489d-848b-82c58f6647f8 ## Local identifier ## Visibility open_to_public ## State published ## Created at 2025-12-15T04:49:30.973321Z ## Updated at 2026-04-30T03:01:11.491392Z ## Published at 2026-09-01T23:25:14.329515Z ## Doi https://doi.org/10.48505/nims.6061 ## First published url https://doi.org/10.1021/acsaelm.5c01142 ## Date published 2025-09-23 ## Recorded date published 2025-9-23 ## Resource type journal_article ## Manuscript type accepted_manuscript ## Collection ## Title - title: Thermal Conductivity and Thermal Boundary Resistance of Low–Dielectric Constant Interlayer Dielectrics in Advanced Very Large Scale Integration Interconnects title_type: original lang: en ## Description - description: Low–dielectric constant (low-k) interlayer dielectrics (ILDs) are necessary to reduce signal propagation delay and electronic crosstalk in advanced very large–scale integration (VLSI) circuits. The thermal conductivity of low-k ILDs substantially influences the temperature rise of VLSI interconnects, which in turn affects the performance and reliability of VLSI circuits. Furthermore, as the technology node is scaled, the thermal boundary resistance (TBR) between wires and low-k ILDs becomes increasingly critical for thermal management in VLSI interconnects. In this study, we experimentally investigated the thermal conductivities and TBRs of methylpolysiloxane-based low-k ILDs. The results showed that although a 5% increase in the methyl content minimally affected the thermal conductivity, it substantially increased the TBR, while curing enhanced both the thermal conductivity and TBR. Persistent homology analysis was performed on the transmission electron microscopy images of the low-k ILDs to extract hidden structural features and quantify the medium-range order, which further elucidated the mechanisms underlying the thermal conductivity modification. Our findings offer insights into thermal transport in low-k ILDs and at interfaces, which are both essential for developing next-generation thermally conductive low-k ILDs and composite thermal interface materials for thermal management in VLSI circuits. description_type: abstract lang: und ## Creator - name: Tianzhuo Zhan role: author - name: Chong Zheng role: author - name: Mao Xu role: author - name: Zhi Cao role: author - name: Yen-Ju Wu role: author orcid: https://orcid.org/0000-0003-2647-3407 organization: National Institute for Materials Science - name: Yibin Xu role: author orcid: https://orcid.org/0000-0001-8600-8748 organization: National Institute for Materials Science - name: Ryo Yokogawa role: author - name: Atsushi Ogura role: author - name: Yanming Xue role: author orcid: https://orcid.org/0000-0003-1061-229X organization: National Institute for Materials Science - name: Haidong Wang role: author - name: Mengjie Song role: author - name: Wei Wang role: author - name: Bo Chen role: author - name: Takanobu Watanabe role: author - name: Yonggang Jiang role: author - name: Huawei Chen role: author - name: Deyuan Zhang role: author ## Contact agent ## Publisher organization: American Chemical Society (ACS) ## Managing organization ## Keyword - subject: thermal conductivity schema: not_defined - subject: thermal boundary resistance schema: not_defined - subject: low-k dielectrics schema: not_defined - subject: VLSI interconnects schema: not_defined - subject: persistent homology schema: not_defined ## Rights - description: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © 2025 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.5c01142. identifier: http://rightsstatements.org/vocab/InC/1.0/ ## Other identifier(s) ## Data origin - data_origin_type: other ## Embargo start_date: 2025-09-02 end_date: 2026-09-02 ## Journal - title: ACS Applied Electronic Materials issn: '26376113' volume: '7' issue: '18' start_page: 8428 end_page: 8439 ## Conference ## Related item ## Funding - identifier: 21K04886 funder_name: Japan Society for the Promotion of Science ## Instrument ## Instrument operator ## Instrument managing organization ## Measurement method ## Specimen ## Chemical composition ## Structure for specimen ## Structural feature for specimen ## Specific property for specimen ## Process for specimen treatment ## Computational method ## Energy level/transition state ## Software ## Custom property ## Fileset - id: d06bb276-1c7f-4a48-8a6c-ba4355e91896 filename: Manuscript_ACS AEM.docx content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document size: 4939857 md5: ed3153c63e82138a17c69f6585b1f724 ## Thumbnail fileset_id: d06bb276-1c7f-4a48-8a6c-ba4355e91896 filename: Manuscript_ACS AEM.docx