Dhruba B. Khadka
(National Institute for Materials Science)
;
Yasuhiro Shirai
(National Institute for Materials Science)
;
Masatoshi Yanagida
(National Institute for Materials Science)
;
Kenjiro Miyano
(National Institute for Materials Science)
説明:
(abstract)The degradation of encapsulated perovskite devices has been investigated by optoelectronic
characterization.The degradation of device performance was found to be influenced by both interface recombination and deep trap assisted recombination in the perovskite. The analysis of temperature dependent current–voltage characteristics and capacitance spectra revealed that the decrease in the activation energy of interface recombination, deepening of the defect levels and reduction in the diffusion potential of devices led to deterioration of device parameters with aging. The degradation of the encapsulated device might be governed by dissociation and migration of constituentions which induce deeper defect levels in the perovskite layer and deteriorate the interface with aging.
権利情報:
キーワード: Perovskite Solar Cells, Interfacial recombination, Degradation mechanism, Defect state.
刊行年月日: 2017-11-28
出版者: Royal Society of Chemistry (RSC)
掲載誌:
研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.5116
公開URL: https://doi.org/10.1039/c7tc03733c
関連資料:
その他の識別子:
連絡先:
更新時刻: 2024-12-09 16:30:35 +0900
MDRでの公開時刻: 2024-12-09 16:30:35 +0900
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JMCC-A~1.PDF
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