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Description:

The degradation of encapsulated perovskite devices has been investigated by optoelectronic
characterization.The degradation of device performance was found to be influenced by both interface recombination and deep trap assisted recombination in the perovskite. The analysis of temperature dependent current–voltage characteristics and capacitance spectra revealed that the decrease in the activation energy of interface recombination, deepening of the defect levels and reduction in the diffusion potential of devices led to deterioration of device parameters with aging. The degradation of the encapsulated device might be governed by dissociation and migration of constituentions which induce deeper defect levels in the perovskite layer and deteriorate the interface with aging.

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• In Copyright
  

Keyword: Perovskite Solar Cells, Interfacial recombination, Degradation mechanism, Defect state.

Date published: 2017-11-28

Publisher: Royal Society of Chemistry (RSC)

Journal:

• Journal of Materials Chemistry C (ISSN: 20507534) vol. 6 issue. 1 p. 162-170

Funding:

• Ministry of Education, Culture, Sports, Science and Technology
• Japan Society for the Promotion of Science JP16K06285

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5116

First published URL: https://doi.org/10.1039/c7tc03733c

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Updated at: 2024-12-09 16:30:35 +0900

Published on MDR: 2024-12-09 16:30:35 +0900