# Evidence of the Coulomb gap in the density of states of <math>  <msub>    <mi>MoS</mi>    <mn>2</mn>  </msub></math>

https://mdr.nims.go.jp/datasets/90e30f3d-735a-4c50-85e1-a581b85020a0

## File

- [PhysRevResearch.5.013113.pdf](https://mdr.nims.go.jp/filesets/d274202d-9713-41d8-85e1-77883ae9f385/download) ([Detail](https://mdr.nims.go.jp/filesets/d274202d-9713-41d8-85e1-77883ae9f385.md))

## Id

90e30f3d-735a-4c50-85e1-a581b85020a0

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-27T06:33:01.209603Z

## Updated at

2025-02-28T03:30:25.917432Z

## Published at

2025-02-28T03:30:26.025785Z

## Doi



## First published url

https://doi.org/10.1103/physrevresearch.5.013113

## Date published

2023-02-14

## Recorded date published

2023-2

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: "Evidence of the Coulomb gap in the density of states of \n<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>"
  title_type: original
  lang: en

## Description

- description: We observe a positive and non-saturating magnetoresistance in bilayer
    MoS2, in a regime where only one band contributes to electron transport. At low
    electron density and large perpendicular magnetic field the resistance exceeds
    by more than one order of magnitude the zero field resistance and rapidly drops
    with increasing temperature. We attribute this observation to strong electron
    lo- calization. Both temperature and magnetic field dependence can, at least qualitatively,
    be described by the Efros-Schlovskii law, predicting the formation of a Coulomb
    gap in the density of states due to Coulomb interactions. However, the localization
    length obtained from fitting the temperature dependence exceeds by more than one
    order of magnitude the one obtained from the magnetic field dependence. We attribute
    this discrepancy to the presence of a close-by metallic gate, which provides electrostatic
    screening and thus reduces long-range Coulomb interactions.
  description_type: abstract
  lang: und

## Creator

- name: Michele Masseroni
  role: author
- name: Tingyu Qu
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Thomas Ihn
  role: author
- name: Klaus Ensslin
  role: author

## Contact agent



## Publisher

organization: American Physical Society (APS)

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## Keyword

- subject: MoS2
  schema: not_defined
- subject: dual-gated exfoliated bilayer
  schema: not_defined
- subject: electron localization
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

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## Journal

- title: Physical Review Research
  issn: '26431564'
  volume: '5'
  issue: '1'
  article_number: '013113'

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## Funding

- funder_name: Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen
    Forschung
- funder_name: National Center of Competence in Research Quantum Science and Technology
- identifier: '95154'
  funder_name: H2020 European Research Council
- identifier: 19H05790
  funder_name: Japan Society for the Promotion of Science
- identifier: 20H00354
  funder_name: Japan Society for the Promotion of Science
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science

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## Fileset

- id: d274202d-9713-41d8-85e1-77883ae9f385
  filename: PhysRevResearch.5.013113.pdf
  content_type: application/pdf
  size: 2353912
  md5: 5d4db4122c9e8ebffad936361c4b2298

## Thumbnail

fileset_id: d274202d-9713-41d8-85e1-77883ae9f385
filename: PhysRevResearch.5.013113.pdf