# Observation of Atomic-Scale Structural Changes in Al<sub>2</sub>O<sub>3</sub>/GaN Interfacial Layers Prepared with a Dummy-SiO<sub>2</sub> Process

https://mdr.nims.go.jp/datasets/90aabd3a-3338-4ea5-be54-354a0b0cdd43

## File

- [Uzuhashi_2025_ECS_J._Solid_State_Sci._Technol._14_085001.pdf](https://mdr.nims.go.jp/filesets/536a7788-e8f4-4ccd-97ee-c842e24907df/download) ([Detail](https://mdr.nims.go.jp/filesets/536a7788-e8f4-4ccd-97ee-c842e24907df.md))

## Id

90aabd3a-3338-4ea5-be54-354a0b0cdd43

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-08-06T01:16:39.997138Z

## Updated at

2025-08-26T02:15:20.546973Z

## Published at

2025-08-06T07:18:58.143626Z

## Doi

https://doi.org/10.48505/nims.5628

## First published url

https://doi.org/10.1149/2162-8777/adf3e3

## Date published

2025-08-01

## Recorded date published

2025-8-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Observation of Atomic-Scale Structural Changes in Al<sub>2</sub>O<sub>3</sub>/GaN
    Interfacial Layers Prepared with a Dummy-SiO<sub>2</sub> Process
  title_type: original
  lang: en

## Description

- description: We previously reported that a dummy-SiO2 process improved the dielectric/GaN
    interface properties [Y. Irokawa et al., ECS J. Solid State Sci. Technol. 13,
    085003 (2024)]; however, the improvement mechanism has remained unclear. In this
    study, the atomic-scale structural changes at Al2O3/GaN interfaces prepared with
    the dummy-SiO2 process are investigated through aberration-corrected scanning
    transmission electron microscopy with energy-dispersive X-ray spectroscopy. The
    results reveal that disordered GaN(O) polarity in the interfacial layer in a sample
    prepared by the standard process was restored to some extent after the dummy-SiO2
    process, which likely led to the improved interface electrical properties.
  description_type: abstract
  lang: und

## Creator

- name: Jun Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
- name: Yoshihiro Irokawa
  role: author
  orcid: https://orcid.org/0000-0002-6531-4356
- name: Toshihide Nabatame
  role: author
  orcid: https://orcid.org/0000-0002-5973-0230
- name: Tadakatsu Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951
- name: Yasuo Koide
  role: author

## Contact agent



## Publisher

organization: The Electrochemical Society

## Managing organization



## Keyword

- subject: transmission electron microscopy
  schema: not_defined
- subject: metal-oxide-semiconductor
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: ECS Journal of Solid State Science and Technology
  issn: '21628769'
  volume: '14'
  issue: '8'
  article_number: '085001'

## Conference



## Related item



## Funding

- identifier: JPJ009777
  funder_name: Ministry of Education, Culture, Sports, Science and Technology, Japan
- identifier: 23K03949
  funder_name: JSPS KAKENHI

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 536a7788-e8f4-4ccd-97ee-c842e24907df
  filename: Uzuhashi_2025_ECS_J._Solid_State_Sci._Technol._14_085001.pdf
  content_type: application/pdf
  size: 647179
  md5: 6c55e8f6028c7c9cb33d7d627bfb706d

## Thumbnail

fileset_id: 536a7788-e8f4-4ccd-97ee-c842e24907df
filename: Uzuhashi_2025_ECS_J._Solid_State_Sci._Technol._14_085001.pdf