# Regulation of Te oxide layer on a CdZnTe film for adjusting surface contact of a CdZnTe-based device

https://mdr.nims.go.jp/datasets/90717eb9-7351-401c-8ac1-444f145e331e

## File

- [Materials Science in Semiconductor Processing-Manuscript -20230901-.pdf](https://mdr.nims.go.jp/filesets/d00db24e-f563-4262-a8f9-05bef49d77b6/download) ([Detail](https://mdr.nims.go.jp/filesets/d00db24e-f563-4262-a8f9-05bef49d77b6.md))

## Id

90717eb9-7351-401c-8ac1-444f145e331e

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-11-10T07:47:23.000000Z

## Updated at

2024-01-05T13:12:48.000000Z

## Published at

2025-09-13T23:17:28.647873Z

## Doi



## First published url

https://doi.org/10.1016/j.mssp.2023.107841

## Date published

2023-09-14

## Recorded date published

2023-12

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Regulation of Te oxide layer on a CdZnTe film for adjusting surface contact
    of a CdZnTe-based device
  title_type: original
  lang: en

## Description

- description: The control of the interface states between the electric contacts and
    semiconductor is a key issue to develop high-performance functional devices. The
    polishing, passivation, and oxidation processes can optimize the surface states
    of the CdZnTe (CZT) film to improve the contact characteristics with the electrode
    and tailor the resistivity to control the electrical performance. In this work,
    a serial of surface treatments including mechanical polishing (MP) + chemical
    polishing (CP) + surface passivation (SP) were conducted to improve the surface
    states of the CZT film. A transparent Ga-doped Zinc oxide (GZO) was used as the
    electrode to fabricate the metal-semiconductor-metal (MSM) CZT-based device. The
    surface treatments of MP, CP, and SP greatly improved the surface contact between
    CZT films and GZO electrodes. By controlling the thickness of Te oxide layers
    on CZT film surfaces through the atmospheric oxidation (AO) and the no-atmospheric
    oxidation (NAO), the thicknesses of oxide layers on CZT film surfaces were adjusted.
    The X-ray photoelectron spectroscopy (XPS) was used to observe the oxidation sate
    of the Te oxide layer. The thickness of the Te oxide layer of CZT film surface
    in atmosphere environment was evaluated as 18–∼20 nm through the in-situ XPS measurement,
    while that of the CZT film in insolated atmosphere was 5∼7 nm. In contrast, the
    CZT film-based device under the combination treatments of MP + CP + SP + AO exhibit
    a surface roughness of ∼4 nm, leading to a significant reduction in the leakage
    current. The present work provides a strategy to control the thickness of Te oxide
    layer on the CZT film surface and fabricate a device with a lower current.
  description_type: abstract
  lang: eng

## Creator

- name: Zilong Zhang
  role: author
- name: Keyun Gu
  role: author
- name: Tianyu Zou
  role: author
- name: Jian Huang
  role: author
- name: Ke Tang
  role: author
- name: Yue Shen
  role: author
- name: Haitao Ye
  role: author
- name: Meiyong Liao
  role: author
  orcid: https://orcid.org/0000-0003-1361-4266
  organization: National Institute for Materials Science
- name: Linjun Wang
  role: author

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: CdZnTe film
  schema: not_defined
- subject: surface
  schema: not_defined
- subject: contacts
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2023-09-14
end_date: 2025-09-14

## Journal

- title: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  issn: '18734081'
  volume: '168'
  start_page: 107841
  end_page: 107841

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: d00db24e-f563-4262-a8f9-05bef49d77b6
  filename: Materials Science in Semiconductor Processing-Manuscript -20230901-.pdf
  content_type: application/pdf
  size: 1045633
  md5: 68bb6f3b6f1de11b815f4215fb663f92

## Thumbnail

fileset_id: d00db24e-f563-4262-a8f9-05bef49d77b6
filename: Materials Science in Semiconductor Processing-Manuscript -20230901-.pdf