# All-2D ReS2 transistors with split gates for logic circuitry

https://mdr.nims.go.jp/datasets/8ef5612b-aa7a-4b42-a309-8a893101b12a

## Files

- [s41598-019-46730-7.pdf](https://mdr.nims.go.jp/filesets/53733584-cdae-4b8b-8292-4bf39ac072a5/download) ([Detail](https://mdr.nims.go.jp/filesets/53733584-cdae-4b8b-8292-4bf39ac072a5.md))

## Id

8ef5612b-aa7a-4b42-a309-8a893101b12a

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-20T06:01:52.825356Z

## Updated at

2025-02-23T13:50:28.214593Z

## Published at

2025-02-23T13:50:28.292799Z

## Doi



## First published url

https://doi.org/10.1038/s41598-019-46730-7

## Date published

2019-07-17

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: All-2D ReS2 transistors with split gates for logic circuitry
  title_type: original
  lang: en

## Description

- description: Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides
    (TMDs) and black phosphorus, are the most promising channel materials for future
    electronics because of their unique electrical properties. Even though a number
    of 2Dmaterials-based logic devices have been demonstrated to date, most of them
    are a combination of more than two unit devices. If logic devices can be realized
    in a single channel, it would be advantageous for higher integration and functionality.
    In this study we report high-performance van der Waals heterostructure (vdW) ReS2
    transistors with graphene electrodes on atomically flat hBN, and demonstrate a
    NAND gate comprising a single ReS2 transistor with split gates. Highly sensitive
    electrostatic doping of ReS2 enables fabrication of gate-tunable NAND logic gates,
    which cannot be achieved in bulk semiconductor materials because of the absence
    of gate tunability. The vdW heterostructure NAND gate comprising a single transistor
    paves a novel way to realize “all-2D” circuitry for flexible and transparent electronic
    applications.
  description_type: abstract
  lang: und

## Creator

- name: Junyoung Kwon
  role: author
- name: Yongjun Shin
  role: author
- name: Hyeokjae Kwon
  role: author
- name: Jae Yoon Lee
  role: author
- name: Hyunik Park
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Jihyun Kim
  role: author
- name: Chul-Ho Lee
  role: author
- name: Seongil Im
  role: author
- name: Gwan-Hyoung Lee
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: 2D semiconductors
  schema: not_defined
- subject: van der Waals heterostructure
  schema: not_defined
- subject: NAND gate
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Scientific Reports
  issn: '20452322'
  volume: '9'
  issue: '1'

## Conference



## Related item



## Funding

- identifier: 2017R1A5A1014862
  funder_name: National Research Foundation of Korea
- identifier: 2018M3D1A1058793
  funder_name: National Research Foundation of Korea
- identifier: NRF-2017R1A2B2006568
  funder_name: National Research Foundation of Korea

## Instrument



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## Measurement method



## Specimen



## Chemical composition



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## Computational method



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## Fileset

- id: 53733584-cdae-4b8b-8292-4bf39ac072a5
  filename: s41598-019-46730-7.pdf
  content_type: application/pdf
  size: 2193444
  md5: 9bc3e54ed1b0ad4dbcb7472fd6f8fe6d

## Thumbnail

fileset_id: 53733584-cdae-4b8b-8292-4bf39ac072a5
filename: s41598-019-46730-7.pdf