# Characterization of wide-gap semiconductors by photothermal deflection spectroscopy

https://mdr.nims.go.jp/datasets/8ec751df-ae65-49ec-a993-e50b23a534b6

## Download

- [ISPlasma2023_paper_NIMS_Sumiya.pdf](https://mdr.nims.go.jp/filesets/74d6a7cd-3bc7-42db-b7dc-32c5f32d9b96/download)

## Id

8ec751df-ae65-49ec-a993-e50b23a534b6

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-12-08T23:54:08.111298Z

## Updated at

2024-12-10T07:56:31.261234Z

## Published at

2024-12-10T07:56:31.320642Z

## Doi

https://doi.org/10.48505/nims.5132

## First published url

https://doi.org/10.35848/1347-4065/ace3cf

## Date published

2023-11-01

## Recorded date published

2023-11-1

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Characterization of wide-gap semiconductors by photothermal deflection spectroscopy
  title_type: original
  lang: en

## Description

- description: III-V nitride semiconductors have been characterized by photothermal
    deflection spectroscopy (PDS) which can provide the information of non-radiative
    recombination involving defect levels. After understanding the challenges of applying
    PDS to materials emitting light, the advantages and features of PDS were described
    for evaluating the defects level in the band gap. The reciprocal of the slope
    of the PDS spectrum near the bandgap energy (Urbach-like energy) increased with
    increasing indium composition in InGaN film. With an increase of the Urbach-like
    energy, the radial distribution determined by x-ray absorption fine structure
    was likely to be decreased. This was possibly attributed to the random aggregation
    of In atoms in InGaN film. Also, it was proposed that the Urbach-like energy may
    be considered when the in-gap emission caused by defects was discussed.
  description_type: abstract
  lang: und

## Creator

- name: Masatomo Sumiya
  role: author
  orcid: https://orcid.org/0000-0003-0960-3812
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: III-V nitride semiconductor
  schema: not_defined
- subject: photothermal deflection spectroscopy
  schema: not_defined
- subject: defect
  schema: not_defined

## Rights

- description: This is the version of the article before peer review or editing, as
    submitted by an author to Japanese Journal of Applied Physics.  IOP Publishing
    Ltd is not responsible for any errors or omissions in this version of the manuscript
    or any version derived from it.  The Version of Record is available online at
    https://dx.doi.org/10.35848/1347-4065/ace3cf
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Japanese Journal of Applied Physics
  issn: '13474065'
  volume: '62'
  issue: SN
  article_number: SN1007

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 74d6a7cd-3bc7-42db-b7dc-32c5f32d9b96
  filename: ISPlasma2023_paper_NIMS_Sumiya.pdf
  content_type: application/pdf
  size: 686680
  md5: 6368bb7b8cc859c3610ff8fd189dae07

## Thumbnail

fileset_id: 74d6a7cd-3bc7-42db-b7dc-32c5f32d9b96
filename: ISPlasma2023_paper_NIMS_Sumiya.pdf