# Anomalous Tunneling Magnetoresistance Oscillation and Electrically Tunable Tunneling Anisotropic Magnetoresistance in Few‐Layer CrPS<sub>4</sub>

https://mdr.nims.go.jp/datasets/8e736597-72a0-47f7-9501-c293713e840c

## File

- [Advanced Physics Research - 2024 - Fu - Anomalous Tunneling Magnetoresistance Oscillation and Electrically Tunable.pdf](https://mdr.nims.go.jp/filesets/6b306c60-90e0-45a3-85f1-e3891fbabee5/download) ([Detail](https://mdr.nims.go.jp/filesets/6b306c60-90e0-45a3-85f1-e3891fbabee5.md))

## Id

8e736597-72a0-47f7-9501-c293713e840c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-04T07:43:30.831153Z

## Updated at

2025-02-05T03:30:51.360960Z

## Published at

2025-02-05T03:30:51.517169Z

## Doi



## First published url

https://doi.org/10.1002/apxr.202400052

## Date published

2024-07-11

## Recorded date published

2024-10

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Anomalous Tunneling Magnetoresistance Oscillation and Electrically Tunable
    Tunneling Anisotropic Magnetoresistance in Few‐Layer CrPS<sub>4</sub>
  title_type: original
  lang: en

## Description

- description: "2D van der Waals (vdW) magnets with layer-dependent magnetic states
    and/or diverse magnetic interactions and anisotropies have attracted extensive
    research interest. Despite the advances, a notable challenge persists in effectively
    manipulating the tunneling anisotropic magnetoresistance (TAMR) of 2D vdW magnet-based
    magnetic tunnel junctions (MTJs). Here, this study reports the novel and anomalous
    tunneling magnetoresistance (TMR) oscillations and pioneering demonstration of
    bias and gate voltage controllable TAMR in 2D vdW MTJs, utilizing few-layer CrPS4.
    This material, inherently an antiferromagnet, transitions to a canted magnetic
    order upon application of external magnetic fields. Through TMR measurements,
    this work unveils the novel layer-dependent oscillations in the tunneling resistance
    for few-layer CrPS4 devices under both out-of-plane and in-plane magnetic fields,
    with a pronounced controllability via gate voltage. Intriguingly, this study demonstrates
    that both the polarity and magnitude of TAMR in CrPS\r\ncan be effectively tuned
    through either a bias or gate voltage. The mechanism behind this electrically
    tunable TAMR is further elucidated through first-principles calculations. The
    implications of the findings are far-reaching, providing new insights into 2D
    magnetism and opening avenues for the development of innovative spintronic devices
    based on 2D vdW magnets."
  description_type: abstract
  lang: und

## Creator

- name: ZhuangEn Fu
  role: author
- name: Hong‐Fei Huang
  role: author
- name: Piumi Samarawickrama
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
- name: Wenyong Wang
  role: author
- name: John Ackerman
  role: author
- name: Jiadong Zang
  role: author
- name: Jie‐Xiang Yu
  role: author
- name: Jifa Tian
  role: author
  orcid: https://orcid.org/0000-0003-2921-470X

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: Tunneling magnetoresistance
  schema: not_defined
- subject: CrPS4
  schema: not_defined
- subject: gate voltage
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Advanced Physics Research
  issn: '27511200'
  volume: '3'
  issue: '10'
  article_number: '2400052'

## Conference



## Related item



## Funding

- identifier: '2228841'
  funder_name: National Science Foundation
- identifier: '12274309'
  funder_name: National Natural Science Foundation of China

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 6b306c60-90e0-45a3-85f1-e3891fbabee5
  filename: Advanced Physics Research - 2024 - Fu - Anomalous Tunneling Magnetoresistance
    Oscillation and Electrically Tunable.pdf
  content_type: application/pdf
  size: 6370147
  md5: dc10e5596dc15a7f880643f074d9aaca

## Thumbnail

fileset_id: 6b306c60-90e0-45a3-85f1-e3891fbabee5
filename: Advanced Physics Research - 2024 - Fu - Anomalous Tunneling Magnetoresistance
  Oscillation and Electrically Tunable.pdf