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2D van der Waals (vdW) magnets with layer-dependent magnetic states and/or diverse magnetic interactions and anisotropies have attracted extensive research interest. Despite the advances, a notable challenge persists in effectively manipulating the tunneling anisotropic magnetoresistance (TAMR) of 2D vdW magnet-based magnetic tunnel junctions (MTJs). Here, this study reports the novel and anomalous tunneling magnetoresistance (TMR) oscillations and pioneering demonstration of bias and gate voltage controllable TAMR in 2D vdW MTJs, utilizing few-layer CrPS4. This material, inherently an antiferromagnet, transitions to a canted magnetic order upon application of external magnetic fields. Through TMR measurements, this work unveils the novel layer-dependent oscillations in the tunneling resistance for few-layer CrPS4 devices under both out-of-plane and in-plane magnetic fields, with a pronounced controllability via gate voltage. Intriguingly, this study demonstrates that both the polarity and magnitude of TAMR in CrPS
can be effectively tuned through either a bias or gate voltage. The mechanism behind this electrically tunable TAMR is further elucidated through first-principles calculations. The implications of the findings are far-reaching, providing new insights into 2D magnetism and opening avenues for the development of innovative spintronic devices based on 2D vdW magnets.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Tunneling magnetoresistance, CrPS4, gate voltage

Date published: 2024-07-11

Publisher: Wiley

Journal:

• Advanced Physics Research (ISSN: 27511200) vol. 3 issue. 10 2400052

Funding:

• National Science Foundation 2228841
• National Natural Science Foundation of China 12274309

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1002/apxr.202400052

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Updated at: 2025-02-05 12:30:51 +0900

Published on MDR: 2025-02-05 12:30:51 +0900