# Observation of Boron Vacancy Concentration in Hexagonal Boron Nitride at Nanometer Scale

https://mdr.nims.go.jp/datasets/8e579ef2-edbd-4452-b0e1-e62f814daa8c

## File

- [kikkawa-et-al-2025-observation-of-boron-vacancy-concentration-in-hexagonal-boron-nitride-at-nanometer-scale.pdf](https://mdr.nims.go.jp/filesets/a0bda6a3-b54b-4797-8d31-ec5566534df4/download) ([Detail](https://mdr.nims.go.jp/filesets/a0bda6a3-b54b-4797-8d31-ec5566534df4.md))

## Id

8e579ef2-edbd-4452-b0e1-e62f814daa8c

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-08-27T01:30:45.935062Z

## Updated at

2025-09-08T04:41:17.617602Z

## Published at

2025-08-27T07:18:56.308519Z

## Doi



## First published url

https://doi.org/10.1021/acs.nanolett.5c02988

## Date published

2025-09-03

## Recorded date published

2025-9-3

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Observation of Boron Vacancy Concentration in Hexagonal Boron Nitride at
    Nanometer Scale
  title_type: original
  lang: en

## Description

- description: Negatively charged boron vacancy (NV-) ensembles in hexagonal boron
    nitride (h-BN) have attracted considerable attention as a promising platform for
    quantum sensing. Current challenges include the experimental validation of the
    spatial distribution and electronic states of optically active VB- and optically
    inactive neutral boron vacancy VB0 defects. To address these issues, we employ
    electron energy loss spectroscopy (EELS) combined with scanning transmission electron
    microscopy (STEM) using monochromated 30-keV electrons, effectively reducing background
    interference. This approach unveils distinct spectral peaks at 2.5 and 1.9 eV,
    corresponding to VB- and VB0 defects, respectively. Furthermore, we achieve nanometer-scale
    concentration mapping for VB- and VB0 defects, advancing insights into spin defect
    configurations crucial for optimizing quantum sensor performance.
  description_type: abstract
  lang: eng

## Creator

- name: Jun Kikkawa
  role: author
  orcid: https://orcid.org/0000-0003-0659-1844
  organization: National Institute for Materials Science
  department: Center for Basic Research on Materials/Advanced Materials Characterization
    Field/Electron Microscopy Group
- name: Chikara Shinei
  role: author
  orcid: https://orcid.org/0000-0003-4926-8641
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Optical Materials
    Field/Semiconductor Defect Design Group
- name: Jun Chen
  role: author
  orcid: https://orcid.org/0000-0003-4272-2653
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Optical Materials
    Field/Semiconductor Defect Design Group
- name: Yuta Masuyama
  role: author
  organization: National Institutes for Quantum Science and Technology
- name: Yuichi Yamazaki
  role: author
  organization: National Institutes for Quantum Science and Technology
- name: Teruyasu Mizoguchi
  role: author
  organization: Univ. Tokyo, Institute for Industrial Science
- name: Koji Kimoto
  role: author
  orcid: https://orcid.org/0000-0002-3927-0492
  organization: National Institute for Materials Science
  department: Center for Basic Research on Materials
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)
- name: Tokuyuki Teraji
  role: author
  orcid: https://orcid.org/0000-0002-7731-0547
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Optical Materials
    Field/Semiconductor Defect Design Group

## Contact agent



## Publisher

organization: American Chemical Society

## Managing organization



## Keyword

- subject: hexagonal boronnitride
  schema: not_defined
- subject: boron vacancy
  schema: not_defined
- subject: electron energy loss spectroscopy
  schema: not_defined
- subject: scanning transmission electron microscopy
  schema: not_defined
- subject: frist-principles simulation
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: NANO LETTERS
  issn: '15306984'

## Conference



## Related item



## Funding

- identifier: " JP22H01959"
  funder_name: 日本学術振興会
- identifier: JP23H02052
  funder_name: 日本学術振興会

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: a0bda6a3-b54b-4797-8d31-ec5566534df4
  filename: kikkawa-et-al-2025-observation-of-boron-vacancy-concentration-in-hexagonal-boron-nitride-at-nanometer-scale.pdf
  content_type: application/pdf
  size: 4917598
  md5: 1fc62351677d20c4b02f810b3e0a87a5

## Thumbnail

fileset_id: a0bda6a3-b54b-4797-8d31-ec5566534df4
filename: kikkawa-et-al-2025-observation-of-boron-vacancy-concentration-in-hexagonal-boron-nitride-at-nanometer-scale.pdf