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The paper explores the optical properties of an exfoliated MoSe2 monolayer im- planted with Cr+ ions, accelerated to 25 eV. Photoluminescence of the implanted MoSe2 reveals an emission line from Cr-related defects that present only under weak electron doping. Unlike band-to-band transition, the Cr-introduced emission is characterised by non-zero activation energy, long lifetimes, and weak response to the magnetic field. To rationalise the experimental results and get insights into the atomic structure of the defects, we modelled the Cr-ion irradiation process using ab-initio molecular dynamics simulations followed by the electronic structure calculations of the system with defects. The experimental and theoretical results suggest that the recombination of electrons on the acceptors, which could be introduced by the Cr implantation-induced defects, with the valence band holes is the most likely origin of the low energy emission. Our results demonstrate the potential of low-energy ion implantation as a tool to tailor the properties of 2D materials by doping.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Cr+ ions, MoSe2 monolayer, photoluminescence

刊行年月日: 2023-07-26

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Applied Materials & Interfaces (ISSN: 19448252) vol. 15 issue. 29 p. 35321-35331

研究助成金:

• Japan Society for the Promotion of Science 20H00354
• Deutsche Forschungsgemeinschaft KR 4866/8-1
• Deutsche Forschungsgemeinschaft SFB-1415-417590517
• Japan Society for the Promotion of Science 19H05790
• Volkswagen Foundation 93 425
• Volkswagen Foundation 93 427
• Volkswagen Foundation 93 428

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acsami.3c05366

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更新時刻: 2025-02-26 08:30:29 +0900

MDRでの公開時刻: 2025-02-26 08:30:29 +0900