# Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

https://mdr.nims.go.jp/datasets/8c6a3823-7bf0-45bb-aacc-1e5294857c3a

## File

- [s41467-018-06524-3.pdf](https://mdr.nims.go.jp/filesets/9bd3c704-a3ff-453f-af73-89e969a1995a/download) ([Detail](https://mdr.nims.go.jp/filesets/9bd3c704-a3ff-453f-af73-89e969a1995a.md))

## Id

8c6a3823-7bf0-45bb-aacc-1e5294857c3a

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-20T04:07:50.371808Z

## Updated at

2025-02-23T13:50:05.233157Z

## Published at

2025-02-23T13:50:05.303444Z

## Doi



## First published url

https://doi.org/10.1038/s41467-018-06524-3

## Date published

2018-09-28

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Atomically precise graphene etch stops for three dimensional integrated systems
    from two dimensional material heterostructures
  title_type: original
  lang: en

## Description

- description: 'We demonstrate the novel use of monolayer graphene as a highly selective
    etch mask in van der Waals (vdW) heterostructures and application in nanoelectronic
    and nanomechanical devices. With the exception of graphene, most 2D materials
    are etched through exposure to XeF2 gas. In contrast, graphene is fluorinated
    into highly resistive and gas impermeable fluorographene. By burying graphene
    within stacked heterostructures of other 2D materials, this unconventional etching
    selectivity allows one-step patterning of sophisticated devices within the heterostructures
    by using the graphene as one-atom-thick etch mask or etch stop. This technique
    enables atomic-precision in etch depth without precise control of etch time or
    process parameters, yet also works on chip-scale patterned arrays. '
  description_type: abstract
  lang: eng

## Creator

- name: Jangyup Son
  role: author
  organization: University of Illinois at Urbana-Champaign
- name: Junyoung Kwon
  role: author
  organization: Yonsei University
- name: SunPhil Kim
  role: author
  organization: University of Illinois at Urbana-Champaign
- name: Yinchuan Lv
  role: author
  organization: University of Illinois at Urbana-Champaign
- name: Jaehyung Yu
  role: author
  organization: University of Illinois at Urbana-Champaign
- name: Jong-Young Lee
  role: author
  organization: Yonsei University
- name: Huije Ryu
  role: author
  organization: Yonsei University
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  department: Research Center for Functional Materials/Electric and Electronic Materials
    Field/Electroceramics Group
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  department: Research Center for Functional Materials/Exploring Function Field/High
    Pressure Group
- name: Rita Garrido-Menacho
  role: author
  organization: University of Illinois at Urbana-Champaign
- name: Nadya Mason
  role: author
  organization: University of Illinois at Urbana-Champaign
- name: Elif Ertekin
  role: author
  organization: University of Illinois at Urbana-Champaign
- name: Pinshane Y. Huang
  role: author
  organization: University of Illinois at Urbana-Champaign
- name: Gwan-Hyoung Lee
  role: author
  organization: Yonsei University
- name: Arend van der Zande
  role: author
  organization: University of Illinois at Urbana-Champaign

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: Atomically precise fabrication
  schema: not_defined
- subject: graphene etch stop
  schema: not_defined
- subject: nanoelectronics
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: NATURE COMMUNICATIONS
  issn: '20411723'
  volume: '9'
  article_number: '3988'

## Conference



## Related item



## Funding

- identifier: '1720633'
  funder_name: NSF | Directorate for Mathematical & Physical Sciences | Division of
    Materials Research
- identifier: NRF-2017R1A2B2006568
  funder_name: National Research Foundation of Korea
- identifier: 2017R1A5A1014862
  funder_name: National Research Foundation of Korea
- identifier: JP15K21722
  funder_name: MEXT | NINS | Institute for Molecular Science

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## Fileset

- id: 9bd3c704-a3ff-453f-af73-89e969a1995a
  filename: s41467-018-06524-3.pdf
  content_type: application/pdf
  size: 2269856
  md5: b374813c77bc85fa5300691baa28aa56

## Thumbnail

fileset_id: 9bd3c704-a3ff-453f-af73-89e969a1995a
filename: s41467-018-06524-3.pdf