Yunus Waheed
;
Sumitra Shit
;
Jithin T. Surendran
;
Indrajeet D. Prasad
;
Kenji Watanabe
(National Institute for Materials Science)
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Santosh Kumar
説明:
(abstract)Transition metal dichalcogenides and related layered materials in their monolayer and a few layers thicknesses regime provide a promising optoelectronic platform for exploring the excitonic- and many-body physics. Strain engineering has emerged as a potent technique for tuning the excitonic emission energies favorable for exciton-based devices. We have investigated the effects of nanoparticle-induced local strain on the optical properties of exciton, X0, and trion, X-, in monolayer WS2. The biaxial tensile strain in the range of 0.1 - 2.0 % was quantified and verified by monitoring the changes in three prominent Raman modes of WS2: E12g(Γ), A1g, and 2LA(M). We obtained a remarkable increase of 34meV in X- binding energy with an average tuning rate of 17.5 ± 2.5 meV/% biaxial strain across all the samples irrespective of the surrounding dielectric environment of monolayer WS2 and the sample preparation conditions. At the highest tensile strain of ≈2%, we have achieved the largest binding energy ≈100 meV for X-, leading to its enhanced emission intensity and thermal stability. By investigating strain-induced linewidth broadening and deformation potentials of both X0 and X- emission, we elucidate that the increase in X- binding energy is due to strain-enhanced electron-phonon coupling. This work holds relevance for future X--based nano-opto-electro-mechanical systems and devices.
権利情報:
キーワード: trion binding energy , monolayer WS2 , strain-enhanced coupling
刊行年月日: 2025-04-29
出版者: Springer Science and Business Media LLC
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1038/s43246-025-00809-z
関連資料:
その他の識別子:
連絡先:
更新時刻: 2026-03-10 16:30:11 +0900
MDRでの公開時刻: 2026-03-10 13:44:49 +0900
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s43246-025-00809-z.pdf
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