# Semiconductor-metal transition powers high-efficiency MgAgSb thermoelectrics

https://mdr.nims.go.jp/datasets/8b6a0ba4-38a1-4f1d-99ba-25f462028bd3

## Files

- [Science Advances---Semiconductor-metal transition powers high-efficiency MgAgSb thermoelectrics.pdf](https://mdr.nims.go.jp/filesets/a29a66c8-8027-4110-806a-467daa652c2c/download) ([Detail](https://mdr.nims.go.jp/filesets/a29a66c8-8027-4110-806a-467daa652c2c.md))

## Id

8b6a0ba4-38a1-4f1d-99ba-25f462028bd3

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-11-08T16:00:26.846396Z

## Updated at

2025-11-11T03:30:30.350331Z

## Published at

2025-11-11T03:22:34.857894Z

## Doi



## First published url

https://doi.org/10.1126/sciadv.adx7115

## Date published

2025-07-04

## Recorded date published

2025-7-4

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Semiconductor-metal transition powers high-efficiency MgAgSb thermoelectrics
  title_type: original
  lang: en

## Description

- description: Due to the inferior thermoelectric performance of metals, the semiconductor-to-metal
    transition in thermoelectric materials is always avoided. Here, we demonstrate
    for the first time that α-to-β semiconductor-metal transition in MgAgSb is actually
    not detrimental but can be strategically exploited to create α/β-MgAgSb junction,
    enabling 150% enhancement in output power while maintaining high conversion efficiency.
    This power enhancement lies in the significantly reduced internal resistance induced
    by semiconductor-to-metal transition, which is independent of dimensional changes.
    Consequently, α/β-MgAgSb can simultaneously achieve high maximum conversion efficiency
    exceeding 10% (9%) and maximum power density above 1 (0.9) W cm-2 by simulation
    (experiment), outperforming most p-type materials under identical conditions.
    Additionally, a two-pair thermoelectric module combining α/β-MgAgSb with n-type
    Mg3Sb0.6Bi1.4 achieves an unprecedented power density, representing significant
    advancements over existing Mg3(Sb,Bi)2/MgAgSb two-pair system. These findings
    highlight the immense potential of α/β-MgAgSb for thermoelectric applications
    and provide insights into the design of high-power thermoelectrics.
  description_type: abstract
  lang: und

## Creator

- name: Airan Li
  role: author
  orcid: https://orcid.org/0009-0004-7318-4821
  organization: National Institute for Materials Science
- name: Longquan Wang
  role: author
  orcid: https://orcid.org/0009-0009-9910-9770
  organization: National Institute for Materials Science
- name: Xinzhi Wu
  role: author
  orcid: https://orcid.org/0000-0002-5545-8460
  organization: National Institute for Materials Science
- name: Jiankang Li
  role: author
  organization: National Institute for Materials Science
- name: Xinyuan Wang
  role: author
  orcid: https://orcid.org/0000-0002-0218-8452
  organization: National Institute for Materials Science
- name: Gang Wu
  role: author
  orcid: https://orcid.org/0009-0007-0201-3787
  organization: National Institute for Materials Science
- name: Zhao Hu
  role: author
  orcid: https://orcid.org/0000-0003-4252-6572
  organization: National Institute for Materials Science
- name: Takao Mori
  role: author
  orcid: https://orcid.org/0000-0003-2682-1846
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: American Association for the Advancement of Science (AAAS)

## Managing organization



## Keyword

- subject: thermoelectric
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Science Advances
  issn: '23752548'
  volume: '11'
  issue: '27'
  article_number: eadx7115

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: a29a66c8-8027-4110-806a-467daa652c2c
  filename: Science Advances---Semiconductor-metal transition powers high-efficiency
    MgAgSb thermoelectrics.pdf
  content_type: application/pdf
  size: 1145691
  md5: 0bc614e4ccdbfdbc4bfc3615328c102b

## Thumbnail

fileset_id: a29a66c8-8027-4110-806a-467daa652c2c
filename: Science Advances---Semiconductor-metal transition powers high-efficiency
  MgAgSb thermoelectrics.pdf