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説明:

Strain has been theoretically predicted and experimentally demonstrated as a tool for modification of graphene's properties through the creation of a pseudomagnetic field (PMF), etc. Introducing controllable PMF in practice has so far posed a challenge. Here, we present the evidence for the presence of PMF induced by thermal strain in extraordinary magnetoresistance (EMR) devices based on monolayer graphene encapsulated in hexagonal boron nitride. Signal processing methods allow us to distinguish weak effects buried in the signals. Investigations of the beating patterns in the Shubnikov-de Haas oscillations complemented by finite element simulations and quantum transport calculations support the existence of PMF of 0.1-0.2 T. The flexibility to control the magnitude and pattern of PMF in such geometry is discussed. The devices studied here also show enhanced EMR effect, commensurability magnetoresistance effect, as well as weak localization and antilocalization at low temperature. The EMR geometry is highlighted as an interesting and useful alternative to the Hall geometry for both fundamental and applied physics studies.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: pseudomagnetic field (PMF)
, thermal strain, graphene

刊行年月日: 2025-08-19

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Nano (ISSN: 19360851) vol. 19 issue. 32 p. 29276-29285

研究助成金:

• Novo Holdings NNF21OC0066526
• Ministry of Education, Culture, Sports, Science and Technology
• Japan Society for the Promotion of Science 21H05233
• Japan Society for the Promotion of Science 23H02052
• Polish high-performance computing infrastructure PLGrid PLG/2024/017407

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acsnano.5c04844

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更新時刻: 2026-02-18 08:30:08 +0900

MDRでの公開時刻: 2026-02-17 17:57:17 +0900