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We present a comprehensive study of magnetotransport in high-mobility trilayer graphene (TLG) devices under a transverse displacement field, focusing on symmetry-broken Landau levels (LLs) from monolayer-like and bilayer-like bands. A striking displacement-field-induced enhancement of the Landé 𝑔-factor is observed in the zeroth Landau level of the monolayer-like band, highlighting the formation of interaction-driven quantum Hall states. Additionally, we find a rich landscape of LL crossings in the Dirac gully region, accompanied by phase transitions between spin-, gully, and valley-polarized LLs. These experimental observations are successfully modeled using calculations based on optimized tight-binding parameters. Furthermore, our results reveal significant particle-hole asymmetry in the sequence of LLs in the Dirac gullies, attributed to differing 𝑔-factor values for electrons and holes. This asymmetry underscores the limitations of noninteracting models in capturing the complexities of multiband systems. This work provides insights into the interplay of symmetry-breaking mechanisms and enhanced interaction effects in Bernal-stacked trilayer graphene, advancing our understanding of quantum transport phenomena in multiband systems.

権利情報:

• In Copyright
  

  @ American Physical Society

キーワード: Trilayer graphene, Landau levels, Quantum Hall effect

刊行年月日: 2025-10-01

出版者: American Physical Society (APS)

掲載誌:

• Physical Review B (ISSN: 1550235X) vol. 112 issue. 16 L161103

研究助成金:

• U.S. Army Combat Capabilities Development Command FA5209 22P0166
• Japan Society for the Promotion of Science 19H05790
• Japan Society for the Promotion of Science 20H00354
• Japan Society for the Promotion of Science 21H05233

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1103/nm8b-5vgm

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更新時刻: 2026-06-26 17:13:51 +0900

MDRでの公開時刻: 2026-06-26 18:28:48 +0900