# Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy

https://mdr.nims.go.jp/datasets/8aa2e172-638d-4607-af4d-67df1403fa12

## File

- [c-BGO-growth111017(SST)_2ndSubmission_Final.pdf](https://mdr.nims.go.jp/filesets/0ddb7479-ac62-4334-ae23-bab0d9f5dcae/download) ([Detail](https://mdr.nims.go.jp/filesets/0ddb7479-ac62-4334-ae23-bab0d9f5dcae.md))

## Id

8aa2e172-638d-4607-af4d-67df1403fa12

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-07T06:19:17.689755Z

## Updated at

2024-01-22T00:42:02.250852Z

## Published at

2024-01-22T03:30:22.206579Z

## Doi

https://doi.org/10.48505/nims.4360

## First published url

https://doi.org/10.1088/1361-6641/aa9c4d

## Date published

2018-01-01

## Recorded date published

2018-1-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: プラズマMBEによる (001) b-Ga2O3 の成長
  title_type: alternative
  lang: ja
- title: Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular
    beam epitaxy
  title_type: original
  lang: en

## Description

- description: 'We investigated the growth characteristics of homoepitaxial (001)
    b-Ga2O3 by plasma-assisted molecular beam epitaxy.  '
  description_type: abstract
  lang: eng

## Creator

- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
  organization: National Institute for Materials Science
- name: Elaheh Ahmadi
  role: author
  orcid: https://orcid.org/0000-0002-8330-9366
- name: Stephen Kaun
  role: author
- name: Feng Wu
  role: author
- name: James S Speck
  role: author

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: β-Ga2O3
  schema: not_defined
- subject: MBE
  schema: not_defined

## Rights

- description: "© 2017 IOP Publishing Ltd<br>\r\nThis is an author-created, un-copyedited
    version of an article accepted for publication/published\r\nin Semiconductor Science
    and Technology. IOP Publishing Ltd is not responsible for any errors or omissions
    in this version of the manuscript or\r\nany version derived from it. The Version
    of Record is available online at https://doi.org/10.1088/1361-6641/aa9c4d."
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  issn: '02681242'
  volume: '33'
  issue: '1'
  start_page: 15013
  end_page: 15013

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 0ddb7479-ac62-4334-ae23-bab0d9f5dcae
  filename: c-BGO-growth111017(SST)_2ndSubmission_Final.pdf
  content_type: application/pdf
  size: 767013
  md5: de3c251128484f356e54dbb38bc4b3d0

## Thumbnail

fileset_id: 0ddb7479-ac62-4334-ae23-bab0d9f5dcae
filename: c-BGO-growth111017(SST)_2ndSubmission_Final.pdf