# Raw data files for Fig. 10 Auger depth profiles in "Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam" https://mdr.nims.go.jp/datasets/8a038de2-f4bc-4c50-a492-bc476ef91fb5 ## Files - [Data109-Raw-data.zip](https://mdr.nims.go.jp/filesets/ac11c55e-3a37-40de-9cef-17fe0bfa1a91/download) ([Detail](https://mdr.nims.go.jp/filesets/ac11c55e-3a37-40de-9cef-17fe0bfa1a91.md)) - [HfO2-Fig10-Work-20230606.pdf](https://mdr.nims.go.jp/filesets/5a2182eb-36d9-40cf-8dca-ecdbe081a511/download) ([Detail](https://mdr.nims.go.jp/filesets/5a2182eb-36d9-40cf-8dca-ecdbe081a511.md)) ## Id 8a038de2-f4bc-4c50-a492-bc476ef91fb5 ## Local identifier identifier: f7228d85-c5b1-430f-a47e-d407abf0180d/MDR_ogiwara_Fig10-2 ## Visibility open_to_public ## State published ## Created at 2023-06-20T05:58:55.724382Z ## Updated at 2024-01-05T13:12:41.096034Z ## Published at 2023-06-23T06:07:10.519423Z ## Doi https://doi.org/10.48505/nims.4193 ## First published url https://doi.org/10.1384/jsa.24.192 ## Date published 2019-03-07 ## Recorded date published 2018 ## Resource type dataset ## Manuscript type na ## Collection ## Title - title: Raw data files for Fig. 10 Auger depth profiles in "Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam" title_type: original lang: und - title: "“極低角度入射ビームオージェ深さ方向分析によるHfO2/Si基板の分析”の Raw data ファイル" title_type: alternative lang: und ## Description - description: We have investigated the Auger depth profiling analysis of HfO2/Si by the glancing-angle ion beam sputtering method at an incident angle of 7 degree from the sample surface with argon ion beam. The depth resolutions of the O KLL interface profiles were 0.9 nm and 1.5 nm, at the ion-beam acceleration voltage of 2.0 kV and 3.0 kV re-spectively, which were better than the depth resolutions at a commonly-used incident angle of 51 degree. However, the ion-beam-induced reduction of HfO2 was not suppressed by the glancing-angle ion beam sputtering at the ion acceleration voltage of 0.5 kV, which is expected to be the lowest damage sputtering condition in this study. The reduction of HfO2 due to preferential sputtering of oxygen was observed by the intensity ratio of O KLL and Hf NVV depth profiles. It was found that the ratio of preferential sputtering depends on the ion incidence angle and the ion acceleration voltage. Under the glancing-angle condition, the ratio of preferential sputtering greatly de-pended on the ion accelerating voltage, and it was found that the lower the ion acceleration voltage is, the easier it is for O to be sputtered than Hf. On the other hand, under the commonly-used incident angle conditions, the ratio of preferential sputtering did not depend much on the ion acceleration voltage. The dependency of the ratio of preferential sputtering on the ion incidence angle can be explained by the difference in sputtering models depend-ing on the ion incidence angle. It was found that the O KLL depth profiles showed partial recovery of the oxygen intensity near the interface of HfO2/Si, which can be related to oxygen generated by the ion-beam-induced decom-position of the diffusion layer at the interface. In addition, the glancing-angle ion beam enables the reduction of the effect of recoil implantation of Hf atoms into the Si substrate. description_type: abstract lang: und ## Creator - name: OGIWARA, Toshiya role: author orcid: https://orcid.org/0000-0002-7376-6571 organization: National Institute for Materials Science ror: https://ror.org/026v1ze26 - name: NAGATA, Takahiro role: author orcid: https://orcid.org/0000-0002-8591-2943 organization: National Institute for Materials Science ror: https://ror.org/026v1ze26 - name: YOSHIKAWA, Hideki role: author orcid: https://orcid.org/0000-0002-7389-8865 organization: National Institute for Materials Science ror: https://ror.org/026v1ze26 ## Contact agent ## Publisher ## Managing organization organization: National Institute for Materials Science department: DPFC ror: https://ror.org/026v1ze26 ## Keyword - subject: Auger depth profiling analysis schema: not_defined - subject: HfO2/Si schema: not_defined - subject: Ultra low angle incidence ion beam schema: not_defined ## Rights - identifier: http://rightsstatements.org/vocab/InC/1.0/ ## Other identifier(s) ## Data origin - data_origin_type: experiment ## Embargo ## Journal ## Conference ## Related item - title: Raw data files for Fig. 9 Auger depth profiles in "Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam" identifier: https://doi.org/10.48505/nims.4167 identifier_type: DOI relation_type: continues related_item_type: dataset - title: Auger Depth Profiling Analysis of HfO2/Si Specimen Using an Ultra Low Angle Incidence Ion Beam identifier: https://doi.org/10.1384/jsa.24.192 identifier_type: DOI relation_type: is_supplement_to related_item_type: dataset ## Funding ## Instrument ## Instrument operator ## Instrument managing organization ## Measurement method - category_description: spectroscopy ## Specimen - name: HfO2/Si ## Chemical composition - description: HfO2/Si ## Structure for specimen ## Structural feature for specimen ## Specific property for specimen ## Process for specimen treatment ## Computational method ## Energy level/transition state ## Software ## Custom property ## Fileset - id: ac11c55e-3a37-40de-9cef-17fe0bfa1a91 filename: Data109-Raw-data.zip content_type: application/zip size: 668940 md5: f77e9ad600992fd8a2a7faba0b838b7e - id: 5a2182eb-36d9-40cf-8dca-ecdbe081a511 filename: HfO2-Fig10-Work-20230606.pdf content_type: application/pdf size: 128574 md5: ca08dd8f9f19b4d1b93b326baefc0198 ## Thumbnail fileset_id: 5a2182eb-36d9-40cf-8dca-ecdbe081a511 filename: HfO2-Fig10-Work-20230606.pdf