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The growth of Ce:(Lu1-xYx)2SiO5 single crystals by the hydrothermal technique is demonstrated. Crystallographic defects are suppressed thanks to the growth at much lower temperatures, and therefore, the complete incorporation of cerium in the Ce3+ valence state is obtained. The growth under supercritical water lowers the temperature to less than half of the melting point. In contrast, crystals grown from melt by the standard Czochralski technique possess intrinsic defects and undesirable Ce4+ ions as charge compensators. The growth of large-size single crystals with improved scintillation properties at a low cost is envisaged.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Hydrothermal crystal growth, Scintillator, Positron Emission Tomograpy

刊行年月日: 2024-12-01

出版者: IOP Publishing

掲載誌:

• Applied Physics Express (ISSN: 18820778) vol. 17 issue. 12 122007

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.35848/1882-0786/ad9b6c

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更新時刻: 2024-12-25 16:30:44 +0900

MDRでの公開時刻: 2024-12-25 16:30:44 +0900